1N5408-E3/73 Vishay, 1N5408-E3/73 Datasheet - Page 3

• Manufacturer Part Number: 1N5408-E3/73
• Description: DIODE GP 3A 1000V DO-201AD
• Manufacturer: Vishay

Specifications of 1N5408-E3/73

• Voltage - Forward (vf) (max) @ If: 1.2V @ 3A
• Voltage - Dc Reverse (vr) (max): 1000V (1kV)
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Product: Standard Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 1000 V
• Forward Voltage Drop: 1.2 V
• Forward Continuous Current: 3 A
• Max Surge Current: 200 A
• Reverse Current Ir: 5 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 50 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 1N5408-E3/54

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88516
Revision: 04-Nov-09
100
0.01
0.01
Fig. 3 - Typical Instantaneous Forward Characteristics
100
0.1
0.1
10
10
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
0.6
Instantaneous Forward Voltage (V)
20
0.8
40
1.0
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1.2
T
T
T
J
J
J
60
= 150 °C
= 100 °C
= 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
1.4
T
J
= 25 °C
80
1.6
100
1.8
0.210 (5.3)
0.190 (4.8)
0.052 (1.32)
0.048 (1.22)
DIA.
DIA.
DO-201AD
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
1.0 (25.4)
100
100
MIN.
MIN.
0.1
10
10
1
1
0.01
0.1
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Fig. 6 - Typical Transient Thermal Impedance
Vishay General Semiconductor
Fig. 5 - Typical Junction Capacitance
0.1
1N5400 thru 1N5408
t - Pulse Duration (s)
Reverse Voltage (V)
1
1
10
V
sig
10
f = 1.0 MHz
T
J
= 50 mV
= 25 °C
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p-p
100
100
3