MURS260HE3/5BT Vishay, MURS260HE3/5BT Datasheet - Page 3

• Manufacturer Part Number: MURS260HE3/5BT
• Description: DIODE 2A 600V 50NS UF DO214AA
• Manufacturer: Vishay

Specifications of MURS260HE3/5BT

• Voltage - Forward (vf) (max) @ If: 1.45V @ 2A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 600 V
• Forward Voltage Drop: 1.45 V
• Recovery Time: 75 ns
• Forward Continuous Current: 2 A
• Max Surge Current: 35 A
• Reverse Current Ir: 5 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88971
Revision: 13-May-08
Figure 3. Maximum Non-Repetitive Peak Forward Surge Current
Figure 4. Typical Instantaneous Forward Characteristics
0.01
100
0.1
50
40
30
20
10
10
0
1
1
0
0.086 (2.20)
0.077 (1.95)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.4
Instantaneous Forward Voltage (V)
Number of Cycles at 50 Hz
T
J
= 175 °C
0.8
T
J
= 25 °C
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DO-214AA (SMB)
1.2
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10
T
J
0.180 (4.57)
0.160 (4.06)
= 100 °C
0.220 (5.59)
0.205 (5.21)
Cathode Band
1.6
0.008 (0.2)
0 (0)
2.0
100
2.4
0.155 (3.94)
0.130 (3.30)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52) MIN.
0.086 (2.18) MIN.
100
10
0.001
Figure 5. Typical Reverse Leakage Characteristics
0.01
1
100
0.1
0.1
10
1
Vishay General Semiconductor
0
Figure 6. Typical Junction Capacitance
Percent of Rated Peak Reverse Voltage (%)
Mounting Pad Layout
MURS240 & MURS260
20
Reverse Voltage (V)
0.220 REF.
1
T
J
T
= 100 °C
J
= 25 °C
40
T
J
= 175 °C
0.085 (2.159) MAX.
60
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
80
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100
100
3