V10P10-M3/86A Vishay, V10P10-M3/86A Datasheet

DIODE SCHOTTKY 10A 100V SMPC

V10P10-M3/86A

Manufacturer Part Number
V10P10-M3/86A
Description
DIODE SCHOTTKY 10A 100V SMPC
Manufacturer
Vishay
Series
eSMP™r
Datasheet

Specifications of V10P10-M3/86A

Operating Temperature Range
- 40 C to + 150 C
Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
680mV @ 10A
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
10A
Current - Reverse Leakage @ Vr
150µA @ 100V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
TO-277A (SMPC)
Product
Schottky Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
10 A
Max Surge Current
180 A
Configuration
Single Dual Anode
Forward Voltage Drop
0.68 V
Maximum Reverse Leakage Current
150 uA
Mounting Style
SMD/SMT
Repetitive Reverse Voltage Vrrm Max
100V
Forward Current If(av)
10A
Forward Voltage Vf Max
620mV
Forward Surge Current Ifsm Max
180A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
V10P10-M3/86AGITR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
V10P10-M3/86A
Manufacturer:
NXP
Quantity:
2 300
Part Number:
V10P10-M3/86A
Manufacturer:
ST
0
Part Number:
V10P10-M3/86A
Manufacturer:
VISHAY
Quantity:
2 500
Part Number:
V10P10-M3/86A
0
Company:
Part Number:
V10P10-M3/86A
Quantity:
3 000
Company:
Part Number:
V10P10-M3/86A
Quantity:
70 000
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling,
protection applications.
Document Number: 89006
Revision: 24-Nov-09
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Non-repetitive avalanche energy
at I
Peak repetitive reverse current at t
T
Operating junction and storage temperature range
J
= 38 °C ± 2 °C
AS
= 2.0 A, T
V
F
at I
T
V
I
J
I
F(AV)
E
FSM
RRM
F
max.
AS
= 10 A
TMBS
J
= 25 °C
dc-to-dc
K
Cathode
TO-277A (SMPC)
®
K
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
Trench MOS Barrier Schottky Rectifier
eSMP
High Current Density Surface Mount
For technical questions within your region, please contact one of the following:
converters
p
A
TM
= 2 µs, 1 kHz,
Anode 1
Anode 2
= 25 °C unless otherwise noted)
Series
2
1
Ultra Low V
0.574 V
100 mJ
150 °C
100 V
180 A
10 A
and
polarity
F
= 0.453 V at I
SYMBOL
T
V
J,
I
I
I
F(AV)
E
FSM
RRM
FEATURES
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Base P/NHM3 - halogen-free and RoHS compliant,
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3
suffix meets JESD 201 class 2 whisker test
RRM
T
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
• Halogen-free according to IEC 61249-2-21
AS
STG
losses
peak of 260 °C
accordance to WEEE 2002/96/EC
definition
DiodesEurope@vishay.com
F
Vishay General Semiconductor
= 5 A
- 40 to + 150
V10P10
V1010
100
180
100
1.0
10
www.vishay.com
V10P10
UNIT
mJ
°C
V
A
A
A
1

Related parts for V10P10-M3/86A

V10P10-M3/86A Summary of contents

Page 1

... Terminals: Matte tin plated leads, solderable per and polarity J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test SYMBOL V RRM I F(AV) I FSM RRM STG DiodesEurope@vishay.com V10P10 V10P10 UNIT V1010 100 180 A 100 mJ 1 150 °C www.vishay.com 1 ...

Page 2

... Pulse test: 300 µs pulse width duty cycle (2) Pulse test: Pulse width ≤ THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance Note (1) Units mounted on recommended P.C.B. 1 oz. pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) V10P10-M3/86A 0.10 V10P10-M3/87A 0.10 (1) V10P10HM3/86A 0.10 (1) V10P10HM3/87A 0.10 Note (1) Automotive grade www ...

Page 3

... D = 1.0 1000 100 0.1 100 10 1 0.8 1.0 0.01 Figure 6. Typical Transient Thermal Impedance DiodesEurope@vishay.com V10P10 Vishay General Semiconductor T = 150 ° 125 ° ° 100 Percent of Rated Peak Reverse Voltage (%) Figure 4. Typical Reverse Characteristics 1 10 100 Reverse Voltage (V) Figure 5 ...

Page 4

... V10P10 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (milliüdmeters) TO-277A (SMPC) 0.187 (4.75) 0.175 (4.45) 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) 0.173 (4.40) 0.155 (3.94) NOM ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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