MBRF7H45HE3/45 Vishay, MBRF7H45HE3/45 Datasheet - Page 3

• Manufacturer Part Number: MBRF7H45HE3/45
• Description: DIODE SCHOTTKY 7.5A 45V TO220-2
• Manufacturer: Vishay

Specifications of MBRF7H45HE3/45

• Voltage - Forward (vf) (max) @ If: 630mV @ 7.5A
• Voltage - Dc Reverse (vr) (max): 45V
• Current - Average Rectified (io): 7.5A
• Current - Reverse Leakage @ Vr: 50µA @ 45V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack, ITO-220AC
• Product: Schottky Diodes
• Peak Reverse Voltage: 45 V
• Forward Continuous Current: 7.5 A
• Max Surge Current: 150 A
• Configuration: Single
• Forward Voltage Drop: 0.75 V at 15 A
• Maximum Reverse Leakage Current: 50 uA
• Operating Temperature Range: - 65 C to + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88796
Revision: 19-May-08
Figure 3. Typical Instantaneous Forward Characteristics Per Leg
A
= 25 °C unless otherwise noted)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
0.01
175
150
125
100
100
0.1
10
75
50
25
10
4
8
6
2
0
1
0
1
0
T
Figure 1. Forward Current Derating Curve
J
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
= 150 °C
25
Instantaneous Forward Voltage (V)
Number of Cycles at 60 Hz
50
Case Temperature (°C)
Current Per Leg
75
T
8.3 ms Single Half Sine-Wave
[e-mail], [e-mail], [e-mail]
J
T
For technical questions within your region, please contact one of the following:
10
= T
J
= 125 °C
100
J
max.
MBR7H35 - MBR7H45
MBR7H50 - MBR7H60
T
J
= 25 °C
MBRF
125
MBR, MBRB
150
100
175
MBR(F,B)7H35 thru MBR(F,B)7H60
0.0001
0.001
1000
Figure 6. Typical Transient Thermal Impedance Per Leg
0.01
100
0.1
0.1
10
10
10
Figure 4. Typical Reverse Characteristics Per Leg
1
1
1
0.01
0.1
Figure 5. Typical Junction Capacitance Per Leg
0
Vishay General Semiconductor
T
f = 1.0 MHz
V
T
Percent of Rated Peak Reverse Voltage (%)
J
sig
J
= 25 °C
= 150 °C
= 50 mVp-p
T
J
20
= 25 °C
MBR7H35 - MBR7H45
MBR7H50 - MBR7H60
t - Pulse Duration (s)
Reverse Voltage (V)
0.1
1
40
T
J
= 125 °C
MBR7H35 - MBR7H45
MBR7H50 - MBR7H60
60
10
1
80
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100
100
10
3