BYV29-400-E3/45 Vishay, BYV29-400-E3/45 Datasheet - Page 3

• Manufacturer Part Number: BYV29-400-E3/45
• Description: DIODE UFAST 8A 400V TO-220AC
• Manufacturer: Vishay

Specifications of BYV29-400-E3/45

• Voltage - Forward (vf) (max) @ If: 1.25V @ 8A
• Voltage - Dc Reverse (vr) (max): 400V
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Mounting Type: Through Hole
• Package / Case: TO-220-2, TO-220AC
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 400 V
• Forward Voltage Drop: 1.4 V at 20 A
• Recovery Time: 50 ns
• Forward Continuous Current: 8 A
• Max Surge Current: 110 A
• Reverse Current Ir: 10 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Details

RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88557
Revision: 07-Nov-07
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
A
= 25 °C unless otherwise noted)
Figure 3. Typical Instantaneous Forward Charateristics
0.01
150
125
100
100
Figure 1. Maximum Forward Current Derating Curve
0.1
75
50
25
10
12
10
0
8
6
4
2
0
1
0.2
1
0
0.4
25
Instantaneous Forward Voltage (V)
Number of Cycles at 60 Hz
UG(F,B)8FT & UG(F,B)8GT, BYV29(F,B)-300 & BYV29(F,B)-400
0.6
T
50
Case Temperature (°C)
J
= 125 °C
0.8
Resistive or Inductive Load
75
T
T
8.3 ms Single Half Sine-Wave
[e-mail], [e-mail], [e-mail]
J
C
= 25 °C
For technical questions within your region, please contact one of the following:
= 100 °C
10
T
100
1.0
J
= 100 °C
125
1.2
150
1.4
100
175
1.6
1000
0.01
160
140
120
100
100
100
Figure 5. Reverse Switching Characteristics Per Leg
0.1
80
60
40
20
10
10
0
1
Figure 4. Typical Reverse Leakage Charateristics
1
0.1
25
20
Vishay General Semiconductor
dI/dt = 100 A/µs
Percent of Rated Peak Reverse Voltage (%)
Figure 6. Typical Junction Capacitance
50
40
dI/dt = 20 A/µs
Junction Temperature (°C)
t
Q
rr
rr
T
Reverse Voltage (V)
J
1
= 25 °C
T
J
dI/dt = 150 A/µs
= 125 °C
T
75
J
60
= 100 °C
dI/dt = 20 A/µs
dI/dt = 150 A/µs
10
T
f = 1.0 MHz
V
J
dI/dt = 100 A/µs
sig
100
80
dI/dt = 50 A/µs
= 25 °C
= 50 mVp-p
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125
100
100
3