NSB8DTHE3/81 Vishay, NSB8DTHE3/81 Datasheet - Page 3

• Manufacturer Part Number: NSB8DTHE3/81
• Description: DIODE GPP 8A 200V PLAST TO263AB
• Manufacturer: Vishay

Specifications of NSB8DTHE3/81

• Voltage - Forward (vf) (max) @ If: 1.1V @ 8A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Details

RATINGS AND CHARACTERISTICS CURVES
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Document Number: 88690
Revision: 08-Nov-07
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
A
= 25 °C unless otherwise noted)
Figure 3. Typical Instantaneous Forward Characteristics
175
150
125
100
100
0.1
10
75
50
25
10
8
6
4
2
0
0
1
0.6
0
1
Figure 1. Forward Current Derating Curve
0.8
Instantaneous Forward Voltage (V)
Number of Cycles at 60 Hz
1.0
Case Temperature (°C)
50
60 Hz Resistive or Inductive Load
1.2
T
8.3 ms Single Half Sine-Wave
J
[e-mail], [e-mail], [e-mail]
= T
For technical questions within your region, please contact one of the following:
10
J
1.4
Max.
Pulse Width = 300 µs
1 % Duty Cycle
100
1.6
1.0 Cycle
1.8
150
100
2.0
NS(F,B)8AT thru NS(F,B)8MT
100
120
100
0.1
10
80
60
40
20
0
1
0.1
Figure 5. Typical Junction Capacitance Per Leg
0
Vishay General Semiconductor
Figure 4. Typical Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
20
1
Reverse Voltage (V)
40
10
T
J
= 25 °C
60
T
T
J
J
= 100 °C
= 75 °C
T
f = 1.0 MHz
V
J
sig
100
= 25 °C
= 50 mVp-p
80
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1000
100
3