MBRB750HE3/81 Vishay, MBRB750HE3/81 Datasheet - Page 3

• Manufacturer Part Number: MBRB750HE3/81
• Description: DIODE SCHOT 7.5A 50V SGL TO263AB
• Manufacturer: Vishay

Specifications of MBRB750HE3/81

• Operating Temperature Range: - 65 C to + 150 C
• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 750mV @ 7.5A
• Voltage - Dc Reverse (vr) (max): 50V
• Current - Average Rectified (io): 7.5A
• Current - Reverse Leakage @ Vr: 500µA @ 50V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Product: Schottky Diodes
• Peak Reverse Voltage: 50 V
• Forward Continuous Current: 7.5 A
• Max Surge Current: 150 A
• Configuration: Single Dual Cathode
• Forward Voltage Drop: 0.75 V
• Maximum Reverse Leakage Current: 500 uA
• Mounting Style: SMD/SMT
• Repetitive Reverse Voltage Vrrm Max: 50V
• Forward Current If(av): 7.5A
• Forward Voltage Vf Max: 750mV
• Forward Surge Current Ifsm Max: 150A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 88680
Revision: 08-Nov-07
0.001
Figure 3. Typical Instantaneous Forward Characteristics
0.01
0.01
100
100
0.1
0.1
10
10
1
1
0
0
Figure 4. Typical Reverse Characteristics
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
T
Percent of Rated Peak Reverse Voltage (%)
J
= 125 °C
Instantaneous Forward Voltage (V)
MBR750 & MBR760
MBR735 - MBR745
20
40
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T
J
= 25 °C
60
Pulse Width = 300 µs
1 % Duty Cycle
MBR750 & MBR760
T
T
MBR735 - MBR745
J
J
= 125 °C
= 75 °C
T
J
= 25 °C
80
100
MBR(F,B)735 thru MBR(F,B)760
10 000
1000
100
100
0.1
10
10
1
0.01
0.1
Figure 6. Typical Transient Thermal Impedance
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
MBR750 & MBR760
MBR735 - MBR745
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
1
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
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100
100
3