MBRB1060HE3/81 Vishay, MBRB1060HE3/81 Datasheet - Page 3

• Manufacturer Part Number: MBRB1060HE3/81
• Description: DIODE SCHOTT 10A 60V SGL TO263AB
• Manufacturer: Vishay

Specifications of MBRB1060HE3/81

• Operating Temperature Range: - 65 C to + 150 C
• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 800mV @ 10A
• Voltage - Dc Reverse (vr) (max): 60V
• Current - Average Rectified (io): 10A
• Current - Reverse Leakage @ Vr: 100µA @ 60V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Product: Schottky Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 10 A
• Max Surge Current: 150 A
• Configuration: Single Dual Cathode
• Forward Voltage Drop: 0.95 V at 20 A
• Maximum Reverse Leakage Current: 100 uA
• Mounting Style: SMD/SMT
• Repetitive Reverse Voltage Vrrm Max: 60V
• Forward Current If(av): 10A
• Forward Voltage Vf Max: 950mV
• Forward Surge Current Ifsm Max: 150A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 88669
Revision: 07-May-08
0.001
Figure 3. Typical Instantaneous Forward Characteristics
0.01
0.01
100
100
0.1
0.1
10
10
1
1
0
0
Figure 4. Typical Reverse Characteristics
T
Percent of Rated Peak Reverse Voltage (%)
J
= 150 °C
0.2
Instantaneous Forward Voltage (V)
MBR1035 - MBR1045
MBR1050 - MBR1060
20
T
J
= 125 °C
0.4
T
40
J
= 25 °C
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T
J
For technical questions within your region, please contact one of the following:
0.6
= 75 °C
MBR1035 - MBR1045
MBR1050 - MBR1060
60
Pulse Width = 300 µs
1 % Duty Cycle
0.8
T
J
= 25 °C
80
1.0
100
1.2
MBR(F,B)1035 thru MBR(F,B)1060
10 000
1000
100
100
0.1
10
1
0.01
0.1
Figure 6. Typical Transient Thermal Impedance
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
MBR1035 - MBR1045
MBR1050 - MBR1060
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
1
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
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100
100
3