MBRB735-E3/81 Vishay, MBRB735-E3/81 Datasheet

MBRB735-E3/81

Manufacturer Part Number

MBRB735-E3/81

Description

DIODE SCHOT 7.5A 35V SGL TO263AB

Manufacturer

Vishay

Datasheet

1.MBR735-E345.pdf (5 pages)

Specifications of MBRB735-E3/81

Diode Type

Schottky

Voltage - Forward (vf) (max) @ If

840mV @ 15A

Voltage - Dc Reverse (vr) (max)

35V

Current - Average Rectified (io)

7.5A

Current - Reverse Leakage @ Vr

100µA @ 35V

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Product

Schottky Diodes

Peak Reverse Voltage

35 V

Forward Continuous Current

7.5 A

Max Surge Current

150 A

Configuration

Single

Forward Voltage Drop

0.84 V @ 15 A

Maximum Reverse Leakage Current

100 uA

Operating Temperature Range

- 65 C to + 150 C

Mounting Style

SMD/SMT

Repetitive Reverse Voltage Vrrm Max

35V

Forward Current If(av)

7.5A

Forward Voltage Vf Max

570mV

Forward Surge Current Ifsm Max

150A

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Reverse Recovery Time (trr)

Capacitance @ Vr, F

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

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Document Number: 88680

Revision: 08-Nov-07

PRIMARY CHARACTERISTICS

MAXIMUM RATINGS (T

PARAMETER

Maximum repetitive peak reverse voltage

Working peak reverse voltage

Maximum DC blocking voltage

Maximum average forward rectified current (Fig. 1)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

Peak repetitive reverse current at t

Voltage rate of change (rated V

Operating junction temperature range

Storage temperature range

Isolation voltage (ITO-220AC only)

from terminal to heatsink t = 1 min

MBR7xx

PIN 2

PIN 1

TO-220AC

F(AV)

FSM

RRM

max.

CASE

MBRB7xx

PIN 2

PIN 1

TO-263AB

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

For technical questions within your region, please contact one of the following:

)

= 2.0 µs, 1 kHz

= 25 °C unless otherwise noted)

HEATSINK

0.57 V, 0.65 V

Schottky Barrier Rectifier

ITO-220AC

35 V to 60 V

MBRF7xx

PIN 1

PIN 2

150 °C

150 A

7.5 A

SYMBOL

dV/dt

F(AV)

RRM

FSM

RWM

RRM

STG

FEATURES

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of

switching mode power supplies, freewheeling diodes,

dc-to-dc converters or polarity protection application.

MECHANICAL DATA

Case: TO-220AC, ITO-220AC, TO-263AB

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MBR(F,B)735 thru MBR(F,B)760

• Guardring for overvoltage protection

• Lower power losses, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum

• Solder dip 260 °C, 40 s (for TO-220AC and

• Component in accordance to RoHS 2002/95/EC

peak of 245 °C (for TO-263AB package)

ITO-220AC package)

and WEEE 2002/96/EC

MBR735

Vishay General Semiconductor

1.0

MBR745

- 65 to + 150

- 65 to + 175

10 000

1500

150

7.5

MBR750

0.5

MBR760

www.vishay.com

UNIT

V/µs

°C

Related parts for MBRB735-E3/81

MBRB735-E3/81 Summary of contents

Page 1

... Storage temperature range Isolation voltage (ITO-220AC only) from terminal to heatsink min Document Number: 88680 For technical questions within your region, please contact one of the following: Revision: 08-Nov-07 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com MBR(F,B)735 thru MBR(F,B)760 Schottky Barrier Rectifier FEATURES ITO-220AC • Guardring for overvoltage protection • ...

Page 2

... MBR(F,B)735 thru MBR(F,B)760 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER Maximum instantaneous forward voltage Maximum reverse current at DC blocking voltage Note: (1) Pulse test: 300 µs pulse width duty cycle THERMAL CHARACTERISTICS (T PARAMETER Thermal resistance from junction to case ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N ...

Page 3

... J 0.01 0.001 Percent of Rated Peak Reverse Voltage (%) Figure 4. Typical Reverse Characteristics Document Number: 88680 For technical questions within your region, please contact one of the following: Revision: 08-Nov-07 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com MBR(F,B)735 thru MBR(F,B)760 10 000 1000 100 10 100 °C J 0.1 ...

Page 4

... MBR(F,B)735 thru MBR(F,B)760 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AC 0.415 (10.54) MAX. 0.154 (3.91) DIA. 0.370 (9.40) 0.148 (3.74) DIA. 0.360 (9.14) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.350 (8.89) 0.625 (15.87) 0.330 (8.38) PIN 1 ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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