MBR16H45-E3/45 Vishay, MBR16H45-E3/45 Datasheet

DIODE SCHOTT 10A 45V SGL TO220-2

MBR16H45-E3/45

Manufacturer Part Number
MBR16H45-E3/45
Description
DIODE SCHOTT 10A 45V SGL TO220-2
Manufacturer
Vishay
Datasheet

Specifications of MBR16H45-E3/45

Voltage - Forward (vf) (max) @ If
660mV @ 16A
Voltage - Dc Reverse (vr) (max)
45V
Current - Average Rectified (io)
16A
Current - Reverse Leakage @ Vr
100µA @ 45V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
TO-220-2 Fused Center, TO-220AC
Product
Schottky Diodes
Peak Reverse Voltage
45 V
Forward Continuous Current
16 A
Max Surge Current
150 A
Configuration
Single
Forward Voltage Drop
0.66 V
Maximum Reverse Leakage Current
100 uA
Operating Temperature Range
- 65 C to + 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Document Number: 88784
Revision: 19-May-08
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Max. average forward rectified current (Fig. 1)
Non-repetitive avalanche energy at 25 °C, I
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current at t
Peak non-repetitive reverse energy (8/20 µs waveform)
Electrostatic discharge capacitor voltage human body model:
C = 100 pF, R = 1.5 kΩ
Voltage rate of change (rated V
MBR16Hxx
PIN 2
PIN 1
TO-220AC
T
V
I
J
I
F(AV)
FSM
RRM
V
max.
I
R
F
High Barrier Technology for Improved High Temperature Performance
CASE
K
1
PIN 2
MBRB16Hxx
PIN 1
TO-263AB
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
For technical questions within your region, please contact one of the following:
2
R
)
C
1
= 25 °C unless otherwise noted)
p
HEATSINK
2
0.56 V, 0.62 V
ITO-220AC
Schottky Barrier Rectifier
MBRF16Hxx
K
35 V to 60 V
= 2.0 µs, 1 kHz
PIN 1
PIN 2
AS
100 µA
175 °C
= 4 A, L = 10 mH
150 A
16 A
1
2
MBR(F,B)16H35 thru MBR(F,B)16H60
SYMBOL MBR16H35 MBR16H45 MBR16H50 MBR16H60
V
V
E
I
dV/dt
I
I
V
F(AV)
E
RRM
FSM
RWM
V
RRM
RSM
DC
AS
C
FEATURES
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
• Solder dip 260 °C, 40 s (for TO-220AC and
• Component in accordance to RoHS 2002/95/EC
peak of 245 °C (for TO-263AB package)
ITO-220AC package)
and WEEE 2002/96/EC
35
35
35
Vishay General Semiconductor
1.0
45
45
45
10 000
150
16
80
20
25
50
50
50
0.5
60
60
60
www.vishay.com
UNIT
V/µs
mJ
mJ
kV
V
V
V
A
A
A
1

Related parts for MBR16H45-E3/45

MBR16H45-E3/45 Summary of contents

Page 1

... E3 suffix for consumer grade, meets JESD 201 class 0. whisker test, HE3 suffix for high reliability grade 100 µA (AEC Q101 qualified), meets JESD 201 class 2 whisker test 175 °C Polarity: As marked Mounting Torque: 10 in-lbs maximum SYMBOL MBR16H35 MBR16H45 MBR16H50 MBR16H60 V 35 RRM V 35 RWM V 35 ...

Page 2

... Maximum reverse current at rated V R Notes: (1) Pulse test: 300 µs pulse width duty cycle (2) Pulse test: Pulse width ≤ THERMAL CHARACTERISTICS (T PARAMETER Thermal resistance, junction to case ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-220AC MBR16H45-E3/45 ITO-220AC MBRF16H45-E3/45 TO-263AB MBRB16H45-E3/45 TO-263AB MBRB16H45-E3/81 TO-220AC MBR16H45HE3/45 ITO-220AC MBRF16H45HE3/45 TO-263AB ...

Page 3

... MBR16H35 - MBR16H45 0.01 MBR16H50 - MBR16H60 ° Percent of Rated Peak Reverse Voltage (%) Figure 4. Typical Reverse Characteristics ° 1.0 MHz mVp-p sig MBR16H35 - MBR16H45 MBR16H50 - MBR16H60 0 Reverse Voltage (V) Figure 5. Typical Junction Capacitance 1 0.01 0 Pulse Duration (s) Figure 6. Typical Transient Thermal Impedance 100 100 10 www.vishay.com 3 ...

Page 4

... MBR(F,B)16H35 thru MBR(F,B)16H60 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AC 0.415 (10.54) MAX. 0.154 (3.91) DIA. 0.370 (9.40) 0.148 (3.74) DIA. 0.360 (9.14) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.350 (8.89) 0.625 (15.87) 0.330 (8.38) PIN 1 ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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