UGB8CTHE3/81 Vishay, UGB8CTHE3/81 Datasheet - Page 3

• Manufacturer Part Number: UGB8CTHE3/81
• Description: DIODE 8A 150V 20NS SGL TO263AB
• Manufacturer: Vishay

Specifications of UGB8CTHE3/81

• Voltage - Forward (vf) (max) @ If: 1V @ 8A
• Voltage - Dc Reverse (vr) (max): 150V
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 10µA @ 150V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Details

RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88765
Revision: 09-Nov-07
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
A
= 25 °C unless otherwise noted)
1000
Figure 3. Typical Instantaneous Forward Charateristics
0.01
100
100
0.1
Figure 1. Maximum Forward Current Derating Curve
12
10
10
10
8
6
4
2
0
1
0.4
0
1
25
0.6
Instantaneous Forward Voltage (V)
Number of Cycles at 60 Hz
Ambient Temperature (°C)
50
0.8
75
T
8.3 ms Single Half Sine-Wave
T
Pulse Width = 300 µs
1 % Duty Cycle
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C
J
= 25 °C
For technical questions within your region, please contact one of the following:
= 100 °C
1.0
10
Resistive or Inductive Load
100
1.2
125
1.4
150
175
100
1.6
1000
UG(F,B)8AT thru UG(F,B)8DT
0.01
100
100
10
0.1
10
60
50
40
30
20
10
0
1
1
0.1
0
0
Figure 5. Reverse Switching Characteristics
V
I
Vishay General Semiconductor
F
R
Figure 4. Typical Reverse Charateristics
Percent of Rated Peak Reverse Voltage (%)
= 4.0 A
Figure 6. Typical Junction Capacitance
= 30 V
25
20
Junction Temperature (°C)
50
dI/dt = 150 A/µs
Reverse Voltage (V)
1
40
T
J
75
= 125 °C
T
J
T
= 25 °C
J
= 100 °C
100
150 A/µs
60
10
125
T
f = 1.0 MHz
V
dI/dt = 100 A/µs
J
sig
100 A/µs
20 A/µs
50 A/µs
50 A/µs
20 A/µs
= 25 °C
= 50 mVp-p
80
150
t
Q
rr
rr
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175
100
100
3