MURB820PBF Vishay, MURB820PBF Datasheet - Page 4

DIODE ULTRA FAST 200V 8A D2PAK

MURB820PBF

Manufacturer Part Number
MURB820PBF
Description
DIODE ULTRA FAST 200V 8A D2PAK
Manufacturer
Vishay
Series
FRED Pt™r
Datasheets

Specifications of MURB820PBF

Diode Type
Standard
Voltage - Forward (vf) (max) @ If
975mV @ 8A
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
8A
Current - Reverse Leakage @ Vr
5µA @ 200V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
35ns
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
200 V
Forward Voltage Drop
0.975 V
Recovery Time
35 ns
Forward Continuous Current
8 A
Max Surge Current
100 A
Reverse Current Ir
5 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Repetitive Reverse Voltage Vrrm Max
200V
Forward Current If(av)
8A
Forward Voltage Vf Max
975mV
Reverse Recovery Time Trr Max
25ns
Forward Surge Current Ifsm Max
100A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
*MURB820PBF
VS-MURB820PBF
VS-MURB820PBF
VSMURB820PBF
VSMURB820PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MURB820PBF
Manufacturer:
Vishay Semiconductors
Quantity:
1 750
VS-MURB820PbF, VS-MURB820-1PbF
Vishay High Power Products
Note
(1)
www.vishay.com
4
Formula used: T
Pd = Forward power loss = I
Pd
REV
180
170
160
150
140
130
10
Fig. 5 - Maximum Allowable Case Temperature vs.
8
6
4
2
0
= Inverse power loss = V
0
0
Fig. 6 - Forward Power Loss Characteristics
See note (1)
I
I
F(AV)
F(AV)
Square wave (D = 0.50)
Rated V
C
- Average Forward Current (A)
- Average Forward Current (A)
Average Forward Current
= T
3
3
R
DC
applied
J
- (Pd + Pd
F(AV)
6
6
R1
x V
REV
x I
DC
FM
) x R
R
(1 - D); I
For technical questions, contact:
at (I
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
9
9
thJC
RMS limit
F(AV)
;
R
/D) (see fig. 6);
at V
12
12
R1
= Rated V
Ultrafast Rectifier,
8 A FRED Pt
R
diodestech@vishay.com
®
200
160
120
50
40
30
20
10
80
40
0
Fig. 7 - Typical Reverse Recovery Time vs. dI
100
100
V
T
T
Fig. 8 - Typical Stored Charge vs. dI
J
J
I
I
I
R
F
F
F
= 125 °C
= 25 °C
= 160 V
= 16 A
= 8 A
= 4 A
dI
dI
F
F
/dt (A/µs)
/dt (A/µs)
V
T
T
J
J
R
= 125 °C
= 25 °C
= 160 V
Document Number: 94081
I
I
I
F
F
F
= 16 A
= 8 A
= 4 A
Revision: 11-Mar-10
F
/dt
1000
1000
F
/dt

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