SBLB1030HE3/81 Vishay, SBLB1030HE3/81 Datasheet - Page 3

• Manufacturer Part Number: SBLB1030HE3/81
• Description: DIODE SCHOTTKY 30V 10A TO-263AB
• Manufacturer: Vishay

Specifications of SBLB1030HE3/81

• Voltage - Forward (vf) (max) @ If: 600mV @ 10A
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 10A
• Current - Reverse Leakage @ Vr: 1mA @ 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 10 A
• Max Surge Current: 250 A
• Configuration: Single Dual Cathode
• Forward Voltage Drop: 0.6 V
• Maximum Reverse Leakage Current: 1000 uA
• Operating Temperature Range: - 40 C to + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 88725
Revision: 25-Apr-08
0.001
Figure 3. Typical Instantaneous Forward Characteristics
0.01
0.01
100
100
0.1
0.1
10
10
1
1
0
0
Figure 4. Typical Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
0.2
T
Instantaneous Forward Voltage (V)
J
20
= 125 °C
0.4
T
40
J
T
= 25 °C
J
[e-mail], [e-mail], [e-mail]
= 125 °C
0.6
For technical questions within your region, please contact one of the following:
T
J
= 75 °C
60
Pulse Width = 300 µs
1 % Duty Cycle
0.8
T
J
= 25 °C
80
1.0
100
1.2
SBL(F,B)1030 & SBL(F,B)1040
10 000
1000
100
100
0.1
10
1
0.01
0.1
Figure 6. Typical Transient Thermal Impedance
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
1
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
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100
100
3