FESB8BT-E3/81 Vishay, FESB8BT-E3/81 Datasheet - Page 3

• Manufacturer Part Number: FESB8BT-E3/81
• Description: DIODE 8A 100V 35NS SGL TO263AB
• Manufacturer: Vishay

Specifications of FESB8BT-E3/81

• Voltage - Forward (vf) (max) @ If: 950mV @ 8A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -

RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88600
Revision: 07-Nov-07
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
A
= 25 °C unless otherwise noted)
Figure 3. Typical Instantaneous Forward Characteristics
150
125
100
100
Figure 1. Maximum Forward Current Derating Curve
10
75
50
25
0.1
10
8
6
4
2
0
0
1
0.2
0
1
Pulse Width = 300 µs
1 % Duty Cycle
Free Air, Ambient Temperature, T
Heatsink, Case Temperature, T
T
J
0.4
= 125 °C
Instantaneous Forward Voltage (V)
0.6
Number of Cycles at 60 Hz
50
0.8
Temperature (°C)
T
8.3 ms Single Half Sine-Wave
1.0
C
[e-mail], [e-mail], [e-mail]
Resistive or Inductive Load
= 100 °C
For technical questions within your region, please contact one of the following:
10
1.2
C
A
100
1.4
T
J
= 25 °C
50 - 200 V
300 - 400 V
500 - 600 V
1.6
1.8
150
100
2.0
FES(F,B)8AT thru FES(F,B)8JT
1000
0.01
100
100
0.1
10
10
Figure 4. Typical Reverse Leakage Characteristics
1
0.1
0
T
T
Vishay General Semiconductor
J
J
Percent of Rated Peak Reverse Voltage (%)
= 25 °C
Figure 5. Typical Junction Capacitance
= 125 °C
50 - 200 V
500 - 600 V
20
50 - 200 V
500 - 600 V
Reverse Voltage (V)
1
40
60
10
T
f = 1.0 MHz
V
T
J
sig
J
= 25 °C
= 100 °C
= 50 mVp-p
80
www.vishay.com
100
100
3