MBRB10H60-E3/81 Vishay, MBRB10H60-E3/81 Datasheet

DIODE SCHOTT 10A 60V SGL TO263AB

MBRB10H60-E3/81

Manufacturer Part Number
MBRB10H60-E3/81
Description
DIODE SCHOTT 10A 60V SGL TO263AB
Manufacturer
Vishay
Datasheet

Specifications of MBRB10H60-E3/81

Voltage - Forward (vf) (max) @ If
710mV @ 10A
Voltage - Dc Reverse (vr) (max)
60V
Current - Average Rectified (io)
10A
Current - Reverse Leakage @ Vr
100µA @ 60V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Product
Schottky Diodes
Peak Reverse Voltage
60 V
Forward Continuous Current
10 A
Max Surge Current
150 A
Configuration
Single Dual Cathode
Forward Voltage Drop
0.85 V at 20 A
Maximum Reverse Leakage Current
100 uA
Operating Temperature Range
- 65 C to + 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Document Number: 88780
Revision: 19-May-08
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current (Fig. 1)
Non-repetitive avalanche energy at 25 °C, I
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse current at t
Peak non-repetitive reverse energy (8/20 µs waveform)
Electrostatic discharge capacitor voltage human body model:
C = 100 pF, R = 1.5 kΩ
Voltage rate of change (rated V
MBR10Hxx
PIN 2
PIN 1
TO-220AC
T
V
I
J
I
F(AV)
FSM
RRM
V
max.
I
R
F
High Barrier Technology for Improved High Temperature Performance
CASE
K
1
MBRB10Hxx
PIN 2
PIN 1
TO-263AB
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
2
For technical questions within your region, please contact one of the following:
R
)
p
C
= 2.0 µs, 1 kHz
1
= 25 °C unless otherwise noted)
HEATSINK
2
ITO-220AC
MBRF10Hxx
PIN 1
PIN 2
0.55 V, 0.61 V
K
AS
Schottky Barrier Rectifier
35 V to 60 V
100 µA
= 4 A, L = 10 mH
175 °C
150 A
10 A
1
2
MBR(F,B)10H35 thru MBR(F,B)10H60
SYMBOL
V
V
E
I
dV/dt
I
I
V
F(AV)
E
RRM
FSM
RWM
V
RRM
RSM
DC
AS
C
FEATURES
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
• Solder dip 260 °C, 40 s (for TO-220AC and
• Component in accordance to RoHS 2002/95/EC
MBR10H35
peak of 245 °C (for TO-263AB package)
ITO-220AC package)
and WEEE 2002/96/EC
35
35
35
Vishay General Semiconductor
1.0
20
MBR10H45
45
45
45
10 000
150
10
80
25
MBR10H50
50
50
50
0.5
10
MBR10H60
60
60
60
www.vishay.com
UNIT
V/µs
mJ
mJ
kV
V
V
V
A
A
A
1

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MBRB10H60-E3/81 Summary of contents

Page 1

... Voltage rate of change (rated Document Number: 88780 For technical questions within your region, please contact one of the following: Revision: 19-May-08 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com MBR(F,B)10H35 thru MBR(F,B)10H60 Schottky Barrier Rectifier FEATURES ITO-220AC • Guardring for overvoltage protection • Lower power losses, high efficiency • ...

Page 2

... MBR(F,B)10H35 thru MBR(F,B)10H60 Vishay General Semiconductor MAXIMUM RATINGS ( °C unless otherwise noted) C PARAMETER Operating junction temperature range Storage temperature range Isolation voltage (ITO-220AC only) from terminal to heatsink min ELECTRICAL CHARACTERISTICS (T PARAMETER Maximum instantaneous forward voltage (2) Maximum reverse current at rated V R Notes: (1) Pulse test: 300 µ ...

Page 3

... Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Document Number: 88780 For technical questions within your region, please contact one of the following: Revision: 19-May-08 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com MBR(F,B)10H35 thru MBR(F,B)10H60 100 10 MBR, MBRB 0.1 ...

Page 4

... MBR(F,B)10H35 thru MBR(F,B)10H60 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AC 0.415 (10.54) MAX. 0.154 (3.91) DIA. 0.370 (9.40) 0.148 (3.74) DIA. 0.360 (9.14) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.350 (8.89) 0.625 (15.87) 0.330 (8.38) PIN 1 ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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