MBRB16H45-E3/81 Vishay, MBRB16H45-E3/81 Datasheet - Page 3

DIODE SCHOTT 16A 45V SGL TO263AB

MBRB16H45-E3/81

Manufacturer Part Number
MBRB16H45-E3/81
Description
DIODE SCHOTT 16A 45V SGL TO263AB
Manufacturer
Vishay
Datasheet

Specifications of MBRB16H45-E3/81

Voltage - Forward (vf) (max) @ If
660mV @ 16A
Voltage - Dc Reverse (vr) (max)
45V
Current - Average Rectified (io)
16A
Current - Reverse Leakage @ Vr
100µA @ 45V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Product
Schottky Diodes
Peak Reverse Voltage
45 V
Forward Continuous Current
16 A
Max Surge Current
150 A
Configuration
Single Dual Cathode
Forward Voltage Drop
0.66 V
Maximum Reverse Leakage Current
100 uA
Operating Temperature Range
- 65 C to + 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88784
Revision: 19-May-08
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
A
= 25 °C unless otherwise noted)
Figure 3. Typical Instantaneous Forward Characteristics
0.01
100
150
125
100
0.1
20
15
10
10
75
50
25
5
0
1
0
0
0
1
Figure 1. Forward Current Derating Curve
0.1
25
T
J
Instantaneous Forward Voltage (V)
= 150 °C
0.2
Number of Cycles at 60 Hz
50
Case Temperature (°C)
0.3
0.4
75
T
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
T
8.3 ms Single Half Sine-Wave
J
0.5
For technical questions within your region, please contact one of the following:
10
= 125 °C
J
= T
MBR16H35 - MBR16H45
MBR16H50 - MBR16H60
100
J
0.6
Max.
T
MBRF
J
0.7
125
= 25 °C
MBR, MBRB
0.8
150
0.9
175
1.0
100
MBR(F,B)16H35 thru MBR(F,B)16H60
10 000
1000
100
0.0001
0.1
10
0.001
0.01
1
100
0.01
0.1
0.1
Figure 6. Typical Transient Thermal Impedance
10
1
Vishay General Semiconductor
0
Figure 4. Typical Reverse Characteristics
T
f = 1.0 MHz
V
J
sig
Figure 5. Typical Junction Capacitance
T
= 25 °C
J
Percent of Rated Peak Reverse Voltage (%)
= 50 mVp-p
= 150 °C
MBR16H35 - MBR16H45
MBR16H50 - MBR16H60
20
MBR16H35 - MBR16H45
MBR16H50 - MBR16H60
t - Pulse Duration (s)
Reverse Voltage (V)
0.1
1
40
60
10
1
T
J
= 125 °C
T
80
J
= 25 °C
www.vishay.com
100
10
100
3

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