UGB5JTHE3/81 Vishay, UGB5JTHE3/81 Datasheet - Page 3

• Manufacturer Part Number: UGB5JTHE3/81
• Description: DIODE 5A 600V 25NS SGL TO263AB
• Manufacturer: Vishay

Specifications of UGB5JTHE3/81

• Voltage - Forward (vf) (max) @ If: 1.75V @ 5A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 5A
• Current - Reverse Leakage @ Vr: 30µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88764
Revision: 09-Nov-07
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
A
10 000
= 25 °C unless otherwise noted)
1000
100
100
80
60
40
20
10
8
7
6
5
4
3
2
0
0
1
1
0
1
0
Figure 1. Forward Current Derating Curve
Figure 3. Typical Reverse Charateristics
Percent of Rated Peak Reverse Voltage (%)
25
20
Number of Cycles at 60 Hz
50
Case Temperature (°C)
T
T
J
J
T
40
= 25 °C
= 125 °C
J
75
= 100 °C
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10
100
60
UGF5
125
UG5, UGB5
80
150
100
175
100
Figure 4. Typical Instantaneous Forward Charateristics
0.01
100
100
180
160
140
120
100
0.1
10
10
80
60
40
20
1
0
1
0.5
25
1
Figure 6. Reverse Switching Characteristics
UG(F,B)5HT & UG(F,B)5JT
Q
t
I
V
rr
F
Vishay General Semiconductor
r
rr
= 5.0 A
Figure 5. Typical Junction Capacitance
= 30 V
Instantaneous Forward Voltage (V)
50
Junction Temperature (°C)
1
Reverse Voltage (V)
dI/dt =
75
1.5
10
100
T
Pulse Width = 300 µs
1 % Duty Cycle
J
60 A/µs
= 25 °C
240 A/µs
240 A/µs
T
f = 1.0 MHz
V
J
sig
= 25 °C
2
= 50 mVp-p
125
60 A/µs
50 A/µs
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100
150
2.5
3