HFA08TB60 | |
|---|---|
| Manufacturer Part Number | HFA08TB60 |
| Description | DIODE HEXFRED 600V 8A TO-220AC |
| Manufacturer | Vishay |
| Series | HEXFRED® |
| HFA08TB60 datasheets |
|
Availability: In stock
International delivery:
Warranty: 60 days
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Specifications of HFA08TB60 | |||
|---|---|---|---|
| Voltage - Forward (vf) (max) @ If | 1.7V @ 8A | Voltage - Dc Reverse (vr) (max) | 600V |
| Current - Average Rectified (io) | 8A | Current - Reverse Leakage @ Vr | 5µA @ 600V |
| Diode Type | Standard | Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 55ns | Mounting Type | Through Hole |
| Package / Case | TO-220-2 Fused Center, TO-220AC | Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Capacitance @ Vr, F | - | Other names | *HFA08TB60 VS-HFA08TB60 VS-HFA08TB60 VSHFA08TB60 VSHFA08TB60 |
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Ultrafast Soft Recovery Diode, 8 A
Base
cathode
2
1
3
Cathode
Anode
TO-220AC
PRODUCT SUMMARY
V
R
V
at 8 A at 25 °C
F
I
F(AV)
t
(typical)
rr
T
(maximum)
J
Q
(typical)
rr
dI
/dt (typical)
(rec)M
I
RRM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
Document Number: 93044
Revision: 30-Jul-08
®
HEXFRED
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low I
• Very low Q
• Specified at operating conditions
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
HFA08TB60 is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 600 V and 8 A continuous current, the HFA08TB60
is especially well suited for use as the companion diode for
600 V
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED
1.7 V
peak recovery current (I
8 A
tendency to “snap-off” during the t
18 ns
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
150 °C
both the diode and the switching transistor. These
65 nC
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
240 A/µs
HEXFRED HFA08TB60 is ideally suited for applications in
5.0 A
power supplies and power conversion systems (such as
inverters), motor drives, and many other similar applications
where high speed, high efficiency is needed.
SYMBOL
TEST CONDITIONS
V
R
I
T
= 100 °C
F
C
I
FSM
I
FRM
T
= 25 °C
C
P
D
T
= 100 °C
C
T
, T
J
Stg
For technical questions, contact: diodes-tech@vishay.com
HFA08TB60
Vishay High Power Products
RRM
rr
®
product line features extremely low values of
) and does not exhibit any
RRM
portion of recovery. The
b
VALUES
UNITS
600
8.0
60
24
36
14
- 55 to + 150
°C
www.vishay.com
V
A
W
1
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HFA08TB60 Summary of contents |
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