HFA08TB120 Vishay, HFA08TB120 Datasheet

DIODE HEXFRED 1200V 8A TO-220AC

HFA08TB120

Manufacturer Part Number
HFA08TB120
Description
DIODE HEXFRED 1200V 8A TO-220AC
Manufacturer
Vishay
Series
HEXFRED®r
Datasheet

Specifications of HFA08TB120

Voltage - Forward (vf) (max) @ If
3.3V @ 8A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Current - Average Rectified (io)
8A
Current - Reverse Leakage @ Vr
10µA @ 1200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
95ns
Mounting Type
Through Hole
Package / Case
TO-220-2 Fused Center, TO-220AC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Capacitance @ Vr, F
-
Other names
*HFA08TB120
Q803550A
VS-HFA08TB120
VS-HFA08TB120
VSHFA08TB120
VSHFA08TB120

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Document Number: 93042
Revision: 30-Jul-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
dI
(rec)M
V
F
T
/dt (typical) at 125 °C
I
at 8 A at 25 °C
RRM
J
Q
t
rr
(maximum)
rr
(typical)
I
(typical)
F(AV)
(typical)
V
R
Cathode
TO-220AC
1
cathode
Base
Ultrafast Soft Recovery Diode, 8 A
2
Anode
3
For technical questions, contact: diodes-tech@vishay.com
85 A/µs
1200 V
140 nC
150 °C
28 ns
3.3 V
4.5 A
8 A
SYMBOL
T
HEXFRED
J
I
I
FSM
FRM
, T
V
P
I
F
R
D
Stg
T
T
T
C
C
C
TEST CONDITIONS
= 100 °C
= 25 °C
= 100 °C
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low I
• Very low Q
• Specified at operating conditions
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
HFA08TB120 is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 1200 V and 8 A continuous current, the
HFA08TB120 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
does not exhibit any tendency to “snap-off” during the t
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA08TB120 is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
®
RRM
rr
Vishay High Power Products
- 55 to + 150
VALUES
1200
73.5
130
8.0
32
29
HFA08TB120
®
product line features
www.vishay.com
UNITS
°C
W
V
A
RRM
) and
1
b

Related parts for HFA08TB120

HFA08TB120 Summary of contents

Page 1

... Higher frequency operation • Reduced snubbing • Reduced parts count DESCRIPTION HFA08TB120 is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ...

Page 2

... MIN. TYP. MAX 106 160 - 4.5 8 140 380 - 335 880 - 133 - - 85 - MIN. TYP. MAX 300 - - 0. (5.0) (10) HFA08TB120 Document Number: 93042 Revision: 30-Jul-08 UNITS - V µ UNITS A/µs UNITS °C K/W g oz. kgf · cm (lbf · in) ...

Page 3

... Reverse Voltage (V) R Fig Typical Junction Capacitance vs. Reverse Voltage 0.01 0.0001 0.001 t - Rectangular Pulse Duration (s) 1 Fig Maximum Thermal Impedance Z For technical questions, contact: diodes-tech@vishay.com HFA08TB120 Vishay High Power Products 1000 T = 150 ° 125 °C 100 100 ° ° ...

Page 4

... HFA08TB120 Vishay High Power Products 160 140 120 100 160 125 ° ° 100 dI /dt (A/µs) F Fig Typical Reverse Recovery Time vs 160 125 ° ° 100 dI /dt (A/µs) F Fig Typical Recovery Current vs. dI www.vishay.com 4 ® HEXFRED Ultrafast Soft Recovery Diode 1000 ...

Page 5

... F ( area under curve defined and I RRM (5) dI (rec)M current during t to point where a line passing and 0.50 I RRM RRM Fig Reverse Recovery Waveform and Definitions For technical questions, contact: diodes-tech@vishay.com HFA08TB120 Vishay High Power Products ( 0.5 I RRM (5) dI /dt (rec)M RRM ...

Page 6

... HFA08TB120 Vishay High Power Products ORDERING INFORMATION TABLE Device code Dimensions Part marking information www.vishay.com 6 ® HEXFRED Ultrafast Soft Recovery Diode 120 ® - HEXFRED family 1 - Process designator A = subs. elec. irrad subs. platinum - Current rating ( Package outline (TB = TO-220, 2 leads Voltage rating (120 = 1200 V) ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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