1SS390TE61 Rohm Semiconductor, 1SS390TE61 Datasheet

DIODE SW 35V 100MA SOD-523 TR

1SS390TE61

Manufacturer Part Number
1SS390TE61
Description
DIODE SW 35V 100MA SOD-523 TR
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of 1SS390TE61

Voltage - Forward (vf) (max) @ If
1V @ 10mA
Voltage - Dc Reverse (vr) (max)
35V
Current - Average Rectified (io)
100mA (DC)
Current - Reverse Leakage @ Vr
10nA @ 25V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Capacitance @ Vr, F
1.2pF @ 6V, 1MHz
Mounting Type
Surface Mount
Package / Case
SC-79, SOD-523
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
1SS390TE61
Manufacturer:
ROHM/罗姆
Quantity:
20 000
High frequency switching
1)Ultra small mold type. (EMD2)
2)High reliability
Silicon epitaxial
Forward current (DC)
Reverse voltage (DC)
Junction temperature
Storage temperature
Forward voltage
Reverse current
Capacitance between terminals
Forward operating resistance
1SS390
Band Switching Diode
Applications
Features
Construction
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Parameter
Parameter
Taping specifications (Unit : mm)
Symbol
Symbol
Tstg
V
V
Ct
Tj
I
I
rf
R
F
R
F
Dimensions (Unit : mm)
JEDEC :SOD-523
JEITA : SC-79
ROHM : EMD2
Min.
0.8±0.05
0.3±0.05
0.90±0.05
-
-
-
-
0.95±0.06
4.0±0.1
-55 to +125
0
Limits
100
125
Typ.
35
-
-
-
-
2.0±0.05
Empty pocket
空ポケット
1/3
Max.
1.0
1.2
0.9
10
4.0±0.1
0.6±0.1
φ1.5±0.05
φ1.55±0.05
Unit
Unit
mA
nA
°C
°C
pF
V
V
0.12±0.05
I
V
V
I
F
F
2.0±0.05
=10mA
R
R
=2mA , f=100MHz , RL=100
=25V
=6V , f=1MHz
Structure
Land size figure (Unit : mm)
φ0.5
EMD2
Conditions
Data Sheet
0.8
2011.03 - Rev.D
0.2
0.2±0.05
0.75±0.05
0.76±0.05

Related parts for 1SS390TE61

1SS390TE61 Summary of contents

Page 1

Band Switching Diode 1SS390 Applications High frequency switching Features 1)Ultra small mold type. (EMD2) 2)High reliability Construction Silicon epitaxial Taping specifications (Unit : mm) Absolute maximum ratings (Ta=25°C) Parameter Forward current (DC) Reverse voltage (DC) Junction temperature Storage temperature Electrical ...

Page 2

Ta=125℃ 10 Ta=75℃ 1 Ta=25℃ Ta=-25℃ 0.1 0.01 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 FORWARD VOLTAGE:VF(V) VF-IF CHARACTERISTICS 860 Ta=25 IF=100mA 850 n=30pcs 840 830 AVE:840.2mV 820 810 VF DISPERSION MAP 20 Ifsm ...

Page 3

DC 0.15 D=1/2 Sin(θ=180 D=t/T VR=40V Tj=125℃ 100 CASE TEMPARATURE:Tc(℃) Derating Curve゙(Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved AVE:5.45kV 6 ...

Page 4

ROHM Co., Ltd. All rights reserved Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ Notice ...

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