RB160A40T-32 Rohm Semiconductor, RB160A40T-32 Datasheet - Page 2

• Manufacturer Part Number: RB160A40T-32
• Description: DIODE SCHOTTKY 40V 1A AXIAL MSR
• Manufacturer: Rohm Semiconductor

Specifications of RB160A40T-32

• Voltage - Forward (vf) (max) @ If: 510mV @ 1A
• Voltage - Dc Reverse (vr) (max): 40V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 30µA @ 40V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -

Diodes
Electrical characteristic curves (Ta=25°C)
1000
100
200
150
100
480
470
460
450
440
430
200
150
100
10
50
50
1
0
0
0.1
0
Ta=150℃
Ta=125℃
100
FORWARD VOLTAGE：VF(mV)
IFSM-t CHARACTERISTICS
VF-IF CHARACTERISTICS
Ta=75℃
VF DISPERSION MAP
IFSM DISRESION MAP
200
1
TIME:t(ms)
AVE:454.3mV
AVE:83.0A
300
Ifsm
Ifsm
400
10
8.3ms
Ta=25℃
Ta=-25℃
t
500
Ta=25℃
n=30pcs
IF=1A
1cyc
600
100
10000
1000
1000
0.01
100
100
30
25
20
15
10
0.1
30
25
20
15
10
10
10
5
0
5
0
1
1
0.001
IM=1mA
0
Mounted on epoxy board
IF=0.5A
5
0.01
td=300us
REVERSE VOLTAGE：VR(V)
Rth-t CHARACTERISTICS
VR-IR CHARACTERISTICS
10
trr DISPERSION MAP
IR DISPERSION MAP
time(s)
0.1
AVE:4.08uA
15
AVE:10.4ns
TIME:t(s)
20
1
25
Rth(j-l)
10
Ta=150℃
30
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
Irr=0.25*IR
Ta=25℃
n=10pcs
Ta=25℃
IF=0.5A
VR=40V
n=30pcs
IR=1A
100
Rth(j-c)
35
Rth(j-a)
1000
40
1000
300
290
280
270
260
250
240
230
220
210
200
100
100
80
60
40
20
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
0
1
1
0
1
0
0
Ifsm
Sin(θ＝180)
IFSM-CYCLE CHARACTERISTICS
FORWARD CURRENT：Io(A)
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
Io-Pf CHARACTERISTICS
AVERAGE RECTIFIED
0.5
Ct DISPERSION MAP
NUMBER OF CYCLES
8.3ms
10
1cyc
AVE:279.7pF
8.3ms
Rev.B
10
1
RB160A40
D=1/2
20
1.5
Ta=25℃
n=10pcs
f=1MHz
VR=0V
f=1MHz
DC
100
2
30
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