DSEP6-06BS IXYS, DSEP6-06BS Datasheet
DSEP6-06BS
Manufacturer Part Number
DSEP6-06BS
Description
DIDOE HFRED 600V 6A TO-252AA
Manufacturer
IXYS
Series
HiPerFRED™r
Datasheet
1.DSEP6-06BS.pdf
(2 pages)
Specifications of DSEP6-06BS
Voltage - Forward (vf) (max) @ If
2.62V @ 6A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
6A
Current - Reverse Leakage @ Vr
5µA @ 600V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
20ns
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Vrrm, (v)
600
Ifavm, D = 0.5, Total, (a)
6
Ifavm, D = 0.5, Per Diode, (a)
6
@ Tc, (°c)
140
Ifrms, (a)
20
Ifsm, 10 Ms, Tvj=45°c, (a)
40
Vf, Max, Tvj =150°c, (v)
1.77
@ If, (a)
6
Trr, Typ, Tvj =25°c, (ns)
15
Irm , Typ, Tvj =100°c, (a)
3.0
@ -di/dt, (a/µs)
200
Tvjm, (°c)
175
Rthjc, Max, (k/w)
2.80
Package Style
TO-252AA (DPak)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
HiPerFRED
with soft recovery
Symbol
I
I
I
E
I
T
T
T
P
Weight
Symbol
I
V
R
t
I
① I
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
V
600
FRMS
FAVM
FSM
AR
R
RM
rr
VJ
VJM
stg
AS
tot
F
thJC
RSM
V
FAVM
①
rating includes reverse blocking losses at T
V
600
RRM
V
Conditions
T
T
T
T
I
V
T
typ.
Conditions
T
T
I
I
V
I
V
AS
F
F
F
Type
DSEP 6-06BS
VJ
C
VJ
VJ
C
VJ
VJ
A
R
R
= 6 A;
= 10 A; -di
= 1 A; -di/dt = 200 A/µs
= 140°C; rectangular, d = 0.5
= 0.8 A; L = 180 µH
= 1.5·V
= 25°C
= 30 V; T
= 100 V; T
= T
= 45°C; t = 10 ms (50 Hz), sine
= 25°C; non-repetitive
= 25°C V
= 150°C V
VJM
TM
R
typ.; f = 10 kHz; repetitive
VJ
F
T
T
/dt = 100 A/µs
VJ
VJ
VJ
R
R
= 25°C
Epitaxial Diode
= V
= V
= 150°C
= 25°C
= 100°C
on product
Marking
RRM
RRM
P6QGUI
VJM
, V
R
Advanced Technical Information
= 0.6 V
RRM
, duty cycle d = 0.5
Characteristic Values
Maximum Ratings
-40...+175
-40...+150
typ.
1.5
20
A
1.74
2.62
175
max.
0.1
0.1
0.3
0.2
2.8
26
40
55
6
5
2
K/W
mA
mJ
µA
°C
°C
°C
ns
W
C
A
A
A
A
V
V
A
g
I
V
t
TO-252AA (DPAK)
Features
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low I
• Soft recovery behaviour
Applications
• Anti saturation diode
• Snubber diode
• Free wheeling diode in converters
• Rectifiers in switch mode power
• Inductive heating and melting
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
• Low noise switching
• Low losses
• Operating at lower temperature or
FAVM
rr
and motor control circuits
supplies (SMPS)
protection circuits
space saving by reduced cooling
RRM
Cathode
RM
-values
= 6 A
= 600 V
= 20 ns
Anode
DSEP 6-06BS
Cathode (Flange)
20080125
1 - 2
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DSEP6-06BS Summary of contents
Page 1
... 100 100° ① I rating includes reverse blocking losses at T FAVM Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved Advanced Technical Information A Maximum Ratings 0.1 0.1 -40...+175 175 -40...+150 55 0 ...
Page 2
... K thJC 0.1 0.01 0.001 0.00001 0.0001 0.001 Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved Advanced Technical Information DSEP 6-06AS DSEP 6-06BS s 0.01 0 DSEP 6-06BS 20080125 ...