DSEP30-06CR IXYS, DSEP30-06CR Datasheet
DSEP30-06CR
Manufacturer Part Number
DSEP30-06CR
Description
DIODE FRED 600V 30A ISOPLUS247
Manufacturer
IXYS
Series
HiPerDynFRED™r
Datasheet
1.DSEP30-06CR.pdf
(2 pages)
Specifications of DSEP30-06CR
Voltage - Forward (vf) (max) @ If
3.07V @ 30A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
30A
Current - Reverse Leakage @ Vr
250µA @ 600V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
15ns
Mounting Type
Through Hole, Radial
Package / Case
ISOPLUS247™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
HiPerDynFRED
with soft recovery
(Electrically Isolated Back Surface)
Symbol
I
I
I
I
E
I
T
T
T
P
V
F
Weight
Symbol
I
V
R
R
t
I
Pulse test:
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
V
FRMS
FAVM
FRM
FSM
AR
R
RM
rr
600
VJ
VJM
stg
C
AS
tot
ISOL
F
thJC
thCH
V
RSM
①
②
①
②
V
600
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300 µs, Duty Cycle < 2.0 %
RRM
V
Conditions
T
t
T
T
I
V
T
50/60 Hz RMS; I
mounting force with clip
typical
Conditions
T
T
I
with heatsink compound
I
V
V
T
P
AS
F
F
C
VJ
VJ
C
VJ
VJ
VJ
A
R
R
= 30 A;
< 10 µs; rep. rating, pulse width limited by T
= 1 A; -di/dt = 200 A/µs;
= 140°C; rectangular, d = 0.5
= 3 A; L = 180 µH
= 1.5·V
= 25°C
= 30 V; T
= 100 V; I
= 45°C; t
= 25°C; non-repetitive
= 25°C V
= 150°C V
= 100°C
Type
DSEP 30-06CR
R
typ.; f = 10 kHz; repetitive
p
VJ
T
T
F
= 10 ms (50 Hz), sine
VJ
VJ
R
R
= 25°C
= 50 A; -di
= V
= V
= 150°C
= 25°C
ISOL
TM
RRM
RRM
≤
1 mA
Epitaxial Diode
F
/dt = 100 A/µs
typ.
VJM
Characteristic Values
0.25
15
2.5
-55...+175
-55...+150
20...120
Maximum Ratings
2500
300
175
250
tbd
1.2
0.3
A
70
30
max.
2.25
3.07
250
6
0.6
3.5
1
K/W
K/W
mA
mJ
V~
µA
°C
°C
°C
ns
Recommended replacement:
DPH30IS600HI
W
C
N
A
A
A
A
A
V
V
A
g
V
t
•
I
ISOPLUS 247
A = Anode, C = Cathode
Features
•
•
•
•
•
•
•
•
•
Applications
•
•
•
•
•
•
•
•
Advantages
•
•
•
Dimensions see Outlines.pdf
FAV
rr
Silicon chip on Direct-Copper-Bond
substrates
- High power dissipation
- Isolated mounting surface
- 2500 V electrical isolation
Low cathode to tab capacitance
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
Soft recovery behaviour
Epoxy meets UL 94V-0
Isolated and UL registered E153432
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters and
motor control circuits and PFC circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low I
- Power dissipation within the diode
- Turn-on loss in the commutating switch
RRM
RM
RM
-values
= 30 A
= 600 V
= 20 ns
reduces:
C
A
DSEP 30-06CR
TM
Isolated back surface *
*
Patent pending
20080317a
(< 25 pF)
1 - 2
Related parts for DSEP30-06CR
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
DIODE 600V 30A ISOPLUS247
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
DIODE FRED 600V 30A TO-247AD
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
DIODE FRED 600V 30A TO-247AD
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
DIODE FRED 1200V 30A TO-247AD
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
DIODE FRED 1200V 30A ISOPLUS247
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
DIODE FRED 1200V 30A ISOPLUS247
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
DIODE HFRED 300V 30A TO-247AC
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
DIODE FRED 400V 30A TO-247AD
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
DIODE FRED 300V 30A TO-247AD
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
HiPerFREDTM Epitaxial Diode with soft recovery
Manufacturer:
IXYS Corporation
Part Number:
Description:
HiPerFET Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
DSEP30-06CR Summary of contents
Page 1
... Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions © 2004 IXYS All rights reserved Epitaxial Diode A ...
Page 2
... K/W Z thJC 0.1 0.001 0.01 Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions and dimensions © 2004 IXYS All rights reserved DSEP 30-06CR s 0 DSEP 30-06CR Constants for Z calculation: thJC i R (K/W) t (s) thi ...