MMBD914LT1G ON Semiconductor, MMBD914LT1G Datasheet - Page 2

DIODE FAST SWITCH 100V SOT23

MMBD914LT1G

Manufacturer Part Number
MMBD914LT1G
Description
DIODE FAST SWITCH 100V SOT23
Manufacturer
ON Semiconductor
Datasheets

Specifications of MMBD914LT1G

Voltage - Forward (vf) (max) @ If
1V @ 10mA
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
200mA (DC)
Current - Reverse Leakage @ Vr
5µA @ 75V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
4ns
Capacitance @ Vr, F
4pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Product
Switching Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
0.2 A
Max Surge Current
0.5 A
Configuration
Single
Recovery Time
4 ns
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Capacitance, Junction
4 pF
Current, Forward
200 mA
Current, Surge
500 mA
Package Type
SOT-23 (TO-236)
Power Dissipation
225 mW
Primary Type
Rectifier
Speed, Switching
High
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-55 to +150 °C
Time, Recovery
4 ns
Voltage, Forward
1 V
Voltage, Reverse
100 V
Dc
08+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMBD914LT1GOS
MMBD914LT1GOS
MMBD914LT1GOSTR

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+10 V
100
1.0
0.1
50 W OUTPUT
10
GENERATOR
0.2
PULSE
820 W
0.1 mF
0.4
Figure 2. Forward Voltage
2.0 k
100 mH
V
F
T
, FORWARD VOLTAGE (VOLTS)
A
= 85°C
0.6
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
Notes:
Notes:
I
F
0.68
0.64
0.60
0.56
0.52
DUT
2. Input pulse is adjusted so I
3. t
0
Figure 1. Recovery Time Equivalent Test Circuit
0.8
p
» t
T
A
rr
= 25°C
0.1 mF
OSCILLOSCOPE
T
50 W INPUT
A
SAMPLING
1.0
2.0
= -40°C
V
R
Figure 4. Capacitance
, REVERSE VOLTAGE (VOLTS)
http://onsemi.com
1.2
4.0
R(peak)
V
2
R
0.001
0.01
t
is equal to 10 mA.
r
1.0
0.1
10
INPUT SIGNAL
10%
90%
0
6.0
t
p
10
t
Figure 3. Leakage Current
V
R
, REVERSE VOLTAGE (VOLTS)
8.0
T
T
F
T
T
T
A
A
20
) of 10 mA.
A
A
A
I
= 150°C
= 125°C
I
= 85°C
= 55°C
= 25°C
R
F
(I
F
30
= I
at i
R
OUTPUT PULSE
= 10 mA; MEASURED
R(REC)
t
rr
i
R(REC)
= 1.0 mA)
40
= 1.0 mA
t
50

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