BAT54LT1G ON Semiconductor, BAT54LT1G Datasheet

DIODE SCHOTTKY 30V DET/SW SOT23

BAT54LT1G

Manufacturer Part Number
BAT54LT1G
Description
DIODE SCHOTTKY 30V DET/SW SOT23
Manufacturer
ON Semiconductor
Datasheets

Specifications of BAT54LT1G

Voltage - Forward (vf) (max) @ If
800mV @ 100mA
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
200mA (DC)
Current - Reverse Leakage @ Vr
2µA @ 25V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
5ns
Capacitance @ Vr, F
10pF @ 1V, 1MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Rectifier Type
Schottky Diode
Configuration
Single
Peak Rep Rev Volt
30V
Avg. Forward Curr (max)
0.2
Rev Curr
2uA
Peak Non-repetitive Surge Current (max)
0.6A
Forward Voltage
0.8V
Operating Temp Range
-55C to 125C
Package Type
SOT-23
Rev Recov Time
5ns
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
0.2 A
Max Surge Current
0.6 A
Recovery Time
5 ns
Forward Voltage Drop
0.8 V @ 0.1 A
Maximum Reverse Leakage Current
2 uA
Operating Temperature Range
- 55 C to + 125 C
Mounting Style
SMD/SMT
Capacitance, Junction
7.6 pF
Current, Forward
200 mA
Power Dissipation
200 mW
Primary Type
Schottky Barrier
Speed, Switching
Fast
Temperature, Junction, Maximum
+125 °C
Temperature, Operating
-55 to +125 °C
Time, Recovery
5 ns
Voltage, Forward
0.52 V
Voltage, Reverse
30 V
Dc
0546
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAT54LT1GOSTR

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Price
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BAT54LT1G
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BAT54LT1G
Schottky Barrier Diodes
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2010
August, 2010 − Rev. 10
MAXIMUM RATINGS
Non−Repetitive Peak Forward
Current
Repetitive Peak Forward Current
= 66%
Reverse Voltage
Forward Power Dissipation
Forward Current (DC)
Junction Temperature
Storage Temperature Range
These Schottky barrier diodes are designed for high speed switching
Pulse Wave = 1 sec, Duty Cycle
Compliant
Extremely Fast Switching Speed
Low Forward Voltage − 0.35 Volts (Typ) @ I
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
@ T
Derate above 25°C
A
= 25°C
t
p
< 10 msec
Rating
(T
J
= 125°C unless otherwise noted)
Symbol
I
I
T
FSM
FRM
V
P
T
I
stg
F
R
F
J
−55 to +125
−55 to +150
200 Max
F
Value
200
600
300
= 10 mAdc
2.0
30
mW/°C
Volts
Unit
mW
mA
mA
mA
°C
°C
†For information on tape and reel specifications,
BAT54LT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DETECTOR AND SWITCHING
SOT−23 (TO−236AB)
*Date Code orientation and/or overbar may
Device
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
SILICON HOT−CARRIER
1
CASE 318
STYLE 8
ORDERING INFORMATION
JV3
M
G
2
CATHODE
http://onsemi.com
(Pb−Free)
3
Package
3
30 VOLTS
SOT−23
DIODES
= Device Code
= Date Code
= Pb−Free Package
Publication Order Number:
ANODE
3000/Tape & Reel
1
MARKING
DIAGRAM
1
Shipping
JV3 M G
BAT54LT1/D
G

Related parts for BAT54LT1G

BAT54LT1G Summary of contents

Page 1

... Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping BAT54LT1G SOT−23 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic Reverse Breakdown Voltage ( μA) R Total Capacitance ( 1.0 MHz) R Reverse Leakage ( Forward Voltage (I = 0.1 mAdc) F Forward Voltage (I = ...

Page 3

100 μH F 0.1 μF DUT 50 Ω OUTPUT PULSE GENERATOR Notes 2.0 kΩ variable resistor adjusted for a Forward Current (I Notes: 2. Input pulse is adjusted so I Notes: ...

Page 4

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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