BAS116LT3G ON Semiconductor, BAS116LT3G Datasheet - Page 2

• Manufacturer Part Number: BAS116LT3G
• Description: DIODE SWITCH 200MA 75V SOT-23
• Manufacturer: ON Semiconductor

Specifications of BAS116LT3G

• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 75V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 5nA @ 75V
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 3µs
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

+10 V
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I
Reverse Voltage Leakage Current (V
Reverse Voltage Leakage Current
Forward Voltage (I
Forward Voltage
Forward Voltage
Forward Voltage
Diode Capacitance (V
Reverse Recovery Time (I
50 W Output
Generator
Pulse
820 W
0.1 mF
(I
(I
(I
F
F
F
F
2.0 k
= 1.0 mAdc)
= 10 mAdc)
= 50 mAdc)
= 150 mAdc)
100 mH
R
= 0 V, f = 1.0 MHz)
F
= I
BR
R
I
F
Characteristic
= 10 mAdc) (Figure 1)
= 100 mAdc)
(V
1. A 2.0 kW variable resistor adjusted for a Forward Current (I
2. Input pulse is adjusted so I
3. t
DUT
R
R
= 75 Vdc)
= 75 Vdc, T
p
Figure 1. Recovery Time Equivalent Test Circuit
» t
(T
A
rr
= 25°C unless otherwise noted)
0.1 mF
OSCILLOSCOPE
J
50 W INPUT
SAMPLING
= 150°C)
http://onsemi.com
R(peak)
V
2
R
is equal to 10 mA.
t
r
INPUT SIGNAL
10%
90%
t
p
Symbol
V
C
V
(BR)
I
t
R
rr
F
D
t
F
) of 10 mA.
I
I
Min
R
F
75
−
−
−
−
−
−
−
−
(I
F
= I
at i
R
OUTPUT PULSE
1000
1250
= 10 mA; MEASURED
1100
Max
R(REC)
900
5.0
2.0
3.0
80
t
−
rr
i
R(REC)
= 1.0 mA)
= 1.0 mA
t
nAdc
Unit
Vdc
mV
pF
ms