NSD16F3T5G ON Semiconductor, NSD16F3T5G Datasheet - Page 2

• Manufacturer Part Number: NSD16F3T5G
• Description: IC DIODE SW 75V 200MA SOT-1123
• Manufacturer: ON Semiconductor

Specifications of NSD16F3T5G

• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 75V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 1µA @ 75V
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 6ns
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-1123
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

+10 V
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
Reverse Breakdown Voltage
Forward Voltage
Diode Capacitance
Forward Recovery Voltage
Reverse Recovery Time
Stored Charge
50 W OUTPUT
(V
(V
(V
(I
(I
(I
(I
(I
(V
(I
(I
(I
GENERATOR
BR
F
F
F
F
F
F
F
R
R
R
R
PULSE
= 1.0 mAdc)
= 10 mAdc)
= 50 mAdc)
= 150 mAdc)
= 10 mAdc, t
= I
= 10 mAdc to V
= 75 Vdc)
= 75 Vdc, T
= 25 Vdc, T
= 0, f = 1.0 MHz)
= 100 mAdc)
820 W
R
= 10 mAdc, R
0.1 mF
J
J
r
2.0 k
= 20 ns)
100 mH
= 150°C)
= 150°C)
R
= 5.0 Vdc, R
L
= 50 W)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
Notes:
Notes:
I
Characteristic
F
D.U.T.
L
2. Input pulse is adjusted so I
3. t
= 500 W)
Figure 1. Recovery Time Equivalent Test Circuit
p
(T
» t
A
rr
= 25°C unless otherwise noted)
0.1 mF
OSCILLOSCOPE
50 W INPUT
SAMPLING
http://onsemi.com
R(peak)
V
2
R
t
is equal to 10 mA.
r
INPUT SIGNAL
10%
90%
t
p
Symbol
V
V
C
Q
V
(BR)
I
t
R
FR
rr
F
D
S
t
F
Min
) of 10 mA.
75
−
−
−
−
−
−
−
−
−
−
−
I
I
R
F
(I
F
= I
1000
1250
Max
1.75
at i
715
855
1.0
2.0
6.0
R
50
30
45
OUTPUT PULSE
−
= 10 mA; MEASURED
R(REC)
t
rr
i
R(REC)
= 1.0 mA)
= 1.0 mA
mAdc
Unit
Vdc
Vdc
mV
pC
pF
ns
t