NSD914F3T5G ON Semiconductor, NSD914F3T5G Datasheet

NSD914F3T5G

Manufacturer Part Number

NSD914F3T5G

Description

IC DIODE SW HS 100V SOT-1123

Manufacturer

ON Semiconductor

Datasheet

1.NSD914F3T5G.pdf (4 pages)

Specifications of NSD914F3T5G

Voltage - Forward (vf) (max) @ If

1V @ 10mA

Voltage - Dc Reverse (vr) (max)

100V

Current - Average Rectified (io)

200mA (DC)

Current - Reverse Leakage @ Vr

5µA @ 75V

Diode Type

Standard

Speed

Small Signal =< 200mA (Io), Any Speed

Reverse Recovery Time (trr)

4ns

Capacitance @ Vr, F

4pF @ 0V, 1MHz

Mounting Type

Surface Mount

Package / Case

SOT-1123

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

H&T Electronics

Part Number:

NSD914F3T5G

Quantity:

24 000

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NSD914F3T5G

High-Speed Switching

Diode

three−leaded device. It is designed for high speed switching

applications and is housed in the SOT−1123 surface mount package.

This device is ideal for low−power surface mount applications where

board space is at a premium.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. 100 mm

2. 500 mm

January, 2009 − Rev. 0

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

Reverse Voltage

Forward Current

Peak Forward Surge Current

Junction and Storage Temperature Range

Total Device Dissipation, T

Thermal Resistance,

Total Device Dissipation, T

Thermal Resistance,

The NSD914F3T5G device is a spin−off of our popular SOT−23

Reduces Board Space

This is a Halide−Free Device

This is a Pb−Free Device

Derate above 25°C

Junction−to−Ambient

Derate above 25°C

Junction−to−Ambient

Junction−to−Lead 3

1 oz, copper traces.

Characteristic

Rating

= 25°C

Symbol

(Note 1)

(Note 2)

FM(surge)

, T

qJA

YJL

stg

−55 to

Value

+150

Max

100

200

500

290

432

347

360

143

2.3

2.8

mW/°C

mAdc

°C/W

Unit

Vdc

°C

†For information on tape and reel specifications,

NSD914F3T5G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Device

CATHODE

ORDERING INFORMATION

MARKING DIAGRAM

http://onsemi.com

CASE 524AA

NSD914F3T5G

SOT−1123

= Device Code

= Date Code

STYLE 2

SOT−1123

(Pb−Free)

Package

R M

Publication Order Number:

ANODE

8000/Tape & Reel

Shipping

NSD914F3/D

†

Related parts for NSD914F3T5G

NSD914F3T5G Summary of contents

Page 1

... NSD914F3T5G High-Speed Switching Diode The NSD914F3T5G device is a spin−off of our popular SOT−23 three−leaded device designed for high speed switching applications and is housed in the SOT−1123 surface mount package. This device is ideal for low−power surface mount applications where board space premium ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Reverse Breakdown Voltage (I = 100 mAdc) R Reverse Voltage Leakage Current ( Vdc Vdc) R Diode Capacitance ( 1.0 MHz) R Forward Voltage (I ...

Page 3

W + 100 mH F 0.1 mF DUT 50 W OUTPUT PULSE GENERATOR Notes 2.0 kW variable resistor adjusted for a Forward Current (I Notes: 2. Input pulse is adjusted so I Notes: ...

Page 4

... SOLDERING FOOTPRINT* 0.35 0.30 0.25 0.90 DIMENSIONS: MILLIMETERS details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...

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