MURS320T3G ON Semiconductor, MURS320T3G Datasheet - Page 2

DIODE ULTRA FAST 3A 200V SMC

MURS320T3G

Manufacturer Part Number
MURS320T3G
Description
DIODE ULTRA FAST 3A 200V SMC
Manufacturer
ON Semiconductor
Datasheets

Specifications of MURS320T3G

Voltage - Forward (vf) (max) @ If
890mV @ 4A
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
4A
Current - Reverse Leakage @ Vr
5µA @ 200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
35ns
Mounting Type
Surface Mount
Package / Case
DO-214AB, SMC
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
200 V
Forward Voltage Drop
0.89 V
Recovery Time
35 ns
Forward Continuous Current
4 A
Max Surge Current
75 A
Reverse Current Ir
5 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Current, Forward
4 A
Current, Reverse
150 μA
Current, Surge
75 A
Package Type
SMC
Primary Type
Rectifier
Speed, Switching
Ultrafast
Temperature, Junction, Maximum
+175 °C
Temperature, Operating
-65 to +175 °C
Time, Recovery
35 ns
Voltage, Forward
0.89 V
Voltage, Reverse
200 V
Rectifier Type
Switching Diode
Peak Rep Rev Volt
200V
Avg. Forward Curr (max)
4A
Rev Curr
5uA
Peak Non-repetitive Surge Current (max)
75A
Forward Voltage
0.89V
Operating Temp Range
-65C to 175C
Rev Recov Time
35ns
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MURS320T3GOS
MURS320T3GOS
MURS320T3GOSTR

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Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Thermal Resistance, Junction−to−Lead
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
Non−Repetitive Peak Surge Current
Operating Junction Temperature
Maximum Instantaneous Forward Voltage (Note 1)
Maximum Instantaneous Reverse Current (Note 1)
Maximum Reverse Recovery Time
Maximum Forward Recovery Time
Working Peak Reverse Voltage
DC Blocking Voltage
(Surge applied at rated load conditions
halfwave, single phase, 60 Hz)
(i
(i
(i
(Rated dc Voltage, T
(Rated dc Voltage, T
(i
(i
(i
F
F
F
F
F
F
= 3.0 A, T
= 4.0 A, T
= 3.0 A, T
= 1.0 A, di/dt = 50 A/ms)
= 0.5 A, i
= 1.0 A, di/dt = 100 A/ms, Recovery to 1.0 V)
R
J
J
J
= 1.0 A, I
= 25°C)
= 25°C)
= 150°C)
Rating
J
J
= 25°C)
= 150°C)
REC
to 0.25 A)
MURS320T3, MURS340T3, MURS360T3
Symbol
V
V
I
I
R
F(AV)
FSM
RWM
V
RRM
http://onsemi.com
T
v
i
t
t
qJL
R
rr
fr
R
F
J
3.0 @ T
4.0 @ T
2
MURS320T3
0.875
0.89
0.71
200
150
5.0
35
25
25
L
L
= 140°C
= 130°C
3.0 @ T
4.0 @ T
MURS340T3
*65 to +175
1.25
1.28
1.05
400
250
10
75
50
50
75
11
L
L
= 130°C
= 115°C
3.0 @ T
4.0 @ T
MURS360T3
1.25
1.28
1.05
600
250
10
75
50
50
L
L
= 130°C
= 115°C
°C/W
Unit
°C
mA
ns
ns
V
A
A
V

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