MBRD320G ON Semiconductor, MBRD320G Datasheet - Page 4

DIODE SCHOTTKY 3A 20V DPAK

MBRD320G

Manufacturer Part Number
MBRD320G
Description
DIODE SCHOTTKY 3A 20V DPAK
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Datasheet

Specifications of MBRD320G

Voltage - Forward (vf) (max) @ If
600mV @ 3A
Voltage - Dc Reverse (vr) (max)
20V
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
200µA @ 20V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Product
Schottky Diodes
Peak Reverse Voltage
20 V
Forward Continuous Current
3 A
Max Surge Current
75 A
Configuration
Single Dual Anode
Forward Voltage Drop
0.7 V @ 6 A
Maximum Reverse Leakage Current
200 uA
Operating Temperature Range
- 65 C to + 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MBRD320G
MBRD320GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBRD320G
Manufacturer:
ON Semiconductor
Quantity:
135
Part Number:
MBRD320G
Manufacturer:
ON
Quantity:
12 500
100
1.0
0.1
10
0.1
125°C
0.2
150°C
Figure 1. Typical Forward Voltage
0.3
v
F
, INSTANTANEOUS VOLTAGE (VOLTS)
0.4
75°C
0.5
T
0.6
J
= 25°C
0.7
0.8
TYPICAL CHARACTERISTICS
0.9
http://onsemi.com
1.0
1.1
4
*The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these curves if V
0.004
0.002
0.001
0.04
0.02
0.01
100
4.0
2.0
1.0
0.4
0.2
0.1
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
40
20
10
10
0
0
0
T
1.0
I
J
PK
Figure 3. Average Power Dissipation
= 150°C
10
/I
I
Figure 2. Typical Reverse Current
AV
F(AV)
2.0
= 20
, AVERAGE FORWARD CURRENT (AMPS)
V
20
R
3.0
, REVERSE VOLTAGE (VOLTS)
4.0
10
30
T
J
125°C
100°C
= 150°C
75°C
25°C
5.0
R
is sufficient below rated V
40
6.0
5
7.0
50
dc
WAVE
SINE
8.0
60
SQUARE
WAVE
9.0
R
10
70
.

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