10MQ060N Vishay, 10MQ060N Datasheet - Page 2

• Manufacturer Part Number: 10MQ060N
• Description: DIODE SCHOTTKY 60V 1.5A D-64
• Manufacturer: Vishay

Specifications of 10MQ060N

• Voltage - Forward (vf) (max) @ If: 630mV @ 1A
• Voltage - Dc Reverse (vr) (max): 60V
• Current - Average Rectified (io): 2.1A
• Current - Reverse Leakage @ Vr: 500µA @ 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Product: Schottky Rectifiers
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 1.5 A
• Max Surge Current: 40 A
• Configuration: Single
• Forward Voltage Drop: 0.71 V
• Maximum Reverse Leakage Current: 500 uA
• Operating Temperature Range: - 55 C to + 150 C
• Mounting Style: SMD/SMT
• Forward Voltage Vf Max: 620mV
• Peak Reflow Compatible (260 C): No
• Leakage Current: 500µA
• Current Rating: 1.5A
• Leaded Process Compatible: No
• Forward Voltage: 630mV
• Breakdown Voltage: 60V
• Forward Current If: 1.5A
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *10MQ060N; VS-10MQ060N; VS-10MQ060N; VS10MQ060N; VS10MQ060N

Document Number: 94118
10MQ060NPbF
Bulletin PD-20773 06/04
Voltage Ratings
Absolute Maximum Ratings
Electrical Specifications
Thermal-Mechanical Specifications
V
V
I
I
E
I
V
I
V
r
C
L
dv/dt Max. Voltage Rate of Change
(1) Pulse Width < 300µs, Duty Cycle < 2%
T
T
R
wt
(*) dPtot
F(AV)
FSM
AR
RM
t
R
RWM
AS
FM
F(TO)
J
stg
thJA
S
T
dTj
Parameters
Parameters
Parameters
Max. Junction Temperature Range (*) -55 to 150
Max. Storage Temperature Range
Max. Thermal Resistance Junction
to Ambient
Approximate Weight
Case Style
Device Marking
Part number
Max. DC Reverse Voltage (V)
Max. Working Peak Reverse Voltage (V)
Max. Average Forward Current
* See Fig. 4
Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 6
Non-Repetitive Avalanche Energy
Repetitive Avalanche Current
Max. Forward Voltage Drop
* See Fig. 1
Max. Reverse Leakage Current (1)
* See Fig. 2
Threshold Voltage
Forward Slope Resistance
Typical Junction Capacitance
Typical Series Inductance
<
Rth( j-a)
1
thermal runaway condition for a diode on its own heatsink
(1)
0.07(0.002) g (oz.)
- 55 to 150
10MQ Units
10MQ Units
10MQ Units
10000
0.63
0.71
0.57
0.63
0.45
86.8
1.5
2.0
1.0
0.5
7.5
2.0
40
10
31
80
IR1H
SMA
°C/W DC operation
V/µs
mΩ
mA
mA
mJ
pF
nH
°C
°C
A
A
A
V
V
V
V
V
50% duty cycle @ T
On PC board 9mm
5µs Sine or 3µs Rect. pulse
10ms Sine or 6ms Rect. pulse
T
@ 1A
@ 1.5A
@ 1A
@ 1.5A
T
T
T
V
Measured lead to lead 5mm from package body
(Rated V
Similar D-64
J
J
J
J
R
= 25 °C, I
= 25 °C
= 125 °C
= T
= 10V
J
max.
R
DC
)
AS
, T
Conditions
= 1A, L = 4mH
Conditions
Conditions
J
= 25°C, test signal = 1Mhz
T
T
V
10MQ060NPbF
2
island(.013mm thick copper pad area)
J
J
R
L
= 120 °C, rectangular wave form.
= 25 °C
= 125 °C
= rated V
60
R
Following any rated
load condition and
with rated V
www.vishay.com
RRM
applied
2