SD253N14S20PV Vishay, SD253N14S20PV Datasheet - Page 7

• Manufacturer Part Number: SD253N14S20PV
• Description: DIODE FAST REC 1400V 250A DO-9
• Manufacturer: Vishay

Specifications of SD253N14S20PV

• Voltage - Forward (vf) (max) @ If: 1.38V @ 785A
• Voltage - Dc Reverse (vr) (max): 1400V (1.4kV)
• Current - Average Rectified (io): 250A
• Current - Reverse Leakage @ Vr: 35mA @ 1400V
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AB, DO-9, Stud
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Capacitance @ Vr, F: -

1E4
1E3
1E2
1E1
1E4
1E3
1E2
1E1
www.irf.com
1E1
1E1
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
tp
tp
0.01
0.02
0.04
S D253N/ R..S 15 S eries
T = 125°C, V
S D253N/ R..S 20 S eries
S inusoidal Pulse
T = 125°C, V
S inusoid al Pulse
d v/ d t = 1000V/ µs
d v/ d t = 1000V/ µs
J
J
1E2
1E2
Pulse Basewidth (µs)
0.1
Pulse Basewidth (µs)
0.2
0.4
Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 16 - Maximum Total Energy Loss Per Pulse Characteristics
RRM
RRM
= 800V
= 1120V
1
2
4
1E 3
1E3
10
0.04
0.02
0.01
0.1
10
0.4
0.2
20 joules per pulse
20 joules per pulse
4
2
1
This product has been designed and qualified for Industrial Level.
Visit us at www.irf.com for sales contact information. 10/06
Data and specifications subject to change without notice.
1E 4
1E4
Qualification Standards can be found on IR's Web site.
1E4
1E 4
1E1
1E1
1E 1
1E1
tp
tp
S D253N/ R..S 20 S eries
T rapezoidal Pulse
T = 125°C, V
S D253N/ R..S 15 S eries
T rapezoidal Pulse
dv/ dt = 1000V/ µs; di/ dt=50A/ µs
T = 125°C, V
d v/ dt = 1000V/ µs; di/ dt=50A/ µs
J
J
0.1
1E2
1E2
Pulse Basewidth (µs)
Pulse Basewidth (µs)
0.2
0.2
RRM
RRM
0.4
0.4
= 800V
= 1120V
1
SD253N/R Series
1
TAC Fax: [phone]
Bulletin I2065 rev. B 10/06
2
2
4
4
10
10
1E3
1E3
20 joules per p ulse
20 joules per pulse
1E 4
1E 4
7