MA3ZD1200L Panasonic - SSG, MA3ZD1200L Datasheet

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MA3ZD1200L

Manufacturer Part Number
MA3ZD1200L
Description
DIODE SCHOTTKY 20V 700MA S-MINI
Manufacturer
Panasonic - SSG
Datasheets

Specifications of MA3ZD1200L

Voltage - Forward (vf) (max) @ If
450mV @ 700mA
Voltage - Dc Reverse (vr) (max)
20V
Current - Average Rectified (io)
700mA
Current - Reverse Leakage @ Vr
200µA @ 20V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
7ns
Capacitance @ Vr, F
100pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
S-Mini 3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MA3ZD12
MA3ZD1200LTR
MA3ZD12TR
MA3ZD12TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MA3ZD1200L
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Schottky Barrier Diodes (SBD)
MA3ZD12
Silicon epitaxial planar type
For high speed switching
■ Features
■ Absolute Maximum Ratings T
Note) * 1: Mounted on an alumina PC board
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: April 2004
• Forward current (Average) I
• Low forward voltage: V
• High-density mounting is possible
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Non-repetitive peak forward
surge current
Junction temperature
Storage temperature
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
possible
* 2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
3. Absolute frequency of input and output is 250 MHz.
and the leakage of current from the operating equipment.
Parameter
Parameter
*2
* 1
F
< 0.45 V
F(AV)
Symbol
V
I
I
F(AV)
T
V
FSM
RRM
T
stg
R
a
j
Symbol
= 25°C ± 3°C
= 700 mA rectification is
V
C
I
t
a
R
rr
F
t
= 25°C
−55 to +125
Rating
700
125
20
25
2
I
V
V
I
I
F
F
rr
R
R
= I
= 700 mA
= 10 mA, R
SKH00099BED
= 20 V
= 0 V, f = 1 MHz
R
= 100 mA
Unit
mA
°C
°C
V
V
A
Conditions
L
= 100 Ω
Marking Symbol: M5E
Internal Connection
1: Anode
2: N.C.
3: Cathode
(0.65)
1
1.3
2.0
±0.1
±0.2
(0.65)
3
2
0.3
Min
+0.1
–0
1
Typ
100
7
3
2
SMini3-F1 Package
Max
0.45
200
0.9
±0.1
EIAJ: SC-79
Unit: mm
0.15
Unit
µA
pF
ns
V
+0.1
–0.05
1

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