DIODE FAST SWITCH 100V SOT23S

MMBD914LT1

Manufacturer Part NumberMMBD914LT1
DescriptionDIODE FAST SWITCH 100V SOT23S
ManufacturerON Semiconductor
MMBD914LT1 datasheet
 


Specifications of MMBD914LT1

Voltage - Forward (vf) (max) @ If1V @ 10mAVoltage - Dc Reverse (vr) (max)100V
Current - Average Rectified (io)200mA (DC)Current - Reverse Leakage @ Vr5µA @ 75V
Diode TypeStandardSpeedSmall Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)4nsCapacitance @ Vr, F4pF @ 0V, 1MHz
Mounting TypeSurface MountPackage / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Peak Reflow Compatible (260 C)NoCurrent Rating200mA
Leaded Process CompatibleNoBreakdown Voltage100V
Rohs CompliantNoDc0530
Lead Free Status / RoHS StatusContains lead / RoHS non-compliantOther namesMMBD914LT1OSCT
1
Page 1
2
Page 2
3
Page 3
Page 1/3

Download datasheet (119Kb)Embed
Next
MMBD914LT1G
High-Speed Switching
Diode
Features
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR−5 Board (Note 1)
T
= 25°C
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2)
T
= 25°C
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
= 100 mAdc)
R
Reverse Voltage Leakage Current
(V
= 20 Vdc)
R
(V
= 75 Vdc)
R
Diode Capacitance
(V
= 0, f = 1.0 MHz)
R
Forward Voltage
(I
= 10 mAdc)
F
Reverse Recovery Time
(I
= I
= 10 mAdc) (Figure 1)
F
R
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 6
Symbol
Value
Unit
V
100
Vdc
R
I
200
mAdc
F
I
500
mAdc
FM(surge)
Symbol
Max
Unit
P
225
mW
D
1.8
mW/°C
556
R
°C/W
qJA
P
300
mW
D
2.4
mW/°C
R
417
°C/W
qJA
T
, T
−55 to +150
°C
J
stg
(T
= 25°C unless otherwise noted)
A
Symbol
Min
Max
Unit
V
100
Vdc
(BR)
I
R
25
nAdc
5.0
mAdc
C
4.0
pF
T
V
1.0
Vdc
F
t
4.0
ns
rr
1
http://onsemi.com
3
1
CATHODE
ANODE
3
1
2
SOT−23
CASE 318
STYLE 8
MARKING DIAGRAM
5D M G
G
1
5D
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MMBD914LT1G
SOT−23
3000/Tape & Reel
(Pb−Free)
MMBD914LT3G
SOT−23
10,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MMBD914LT1/D

MMBD914LT1 Summary of contents

  • Page 1

    ... MMBD914LT1G SOT−23 3000/Tape & Reel (Pb−Free) MMBD914LT3G SOT−23 10,000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MMBD914LT1/D † ...

  • Page 2

    W + 100 mH F 0.1 mF DUT 50 W OUTPUT PULSE GENERATOR Notes 2.0 kW variable resistor adjusted for a Forward Current (I Notes: 2. Input pulse is adjusted so I Notes: ...

  • Page 3

    ... ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBD914LT1/D ...