MBRS360T3 ON Semiconductor, MBRS360T3 Datasheet
MBRS360T3
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MBRS360T3 Summary of contents
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... MBRS360T3, MBRS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system ...
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THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead (Note 2) Thermal Resistance, Junction−to−Ambient (Note 2) Thermal Resistance, Junction−to−Ambient (Note 3) ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 3 25° Maximum Instantaneous Reverse Current (Note ...
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SQUARE WAVE ...
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D = 0.5 0.2 10 0.1 0.05 1 0.01 SINGLE PULSE 0.1 0.00001 0.0001 0.001 Figure 8. Thermal Response, Junction−to−Ambient, SMC Package 100 50% Duty Cycle 20% 10 0.1 Single Pulse 0.01 0.000001 0.00001 ...
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... 3.810 0.150 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS SMC PLASTIC PACKAGE CASE 403−03 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...
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... REF 0.020 REF mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MBRS360T3/D ...