BAS116LT1 ON Semiconductor, BAS116LT1 Datasheet - Page 2

• Manufacturer Part Number: BAS116LT1
• Description: DIODE SWITCH 200MA 75V SOT23
• Manufacturer: ON Semiconductor

Specifications of BAS116LT1

• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 75V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 5nA @ 75V
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 3µs
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BAS116LT1OSCT

+10 V
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I
Reverse Voltage Leakage Current (V
Reverse Voltage Leakage Current
Forward Voltage (I
Forward Voltage
Forward Voltage
Forward Voltage
Diode Capacitance (V
Reverse Recovery Time (I
50 W Output
Generator
Pulse
820 W
0.1 mF
(I
(I
(I
F
F
F
F
2.0 k
= 1.0 mAdc)
= 10 mAdc)
= 50 mAdc)
= 150 mAdc)
100 mH
R
= 0 V, f = 1.0 MHz)
F
= I
BR
R
I
F
Characteristic
= 10 mAdc) (Figure 1)
= 100 mAdc)
(V
1. A 2.0 kW variable resistor adjusted for a Forward Current (I
2. Input pulse is adjusted so I
3. t
DUT
R
R
= 75 Vdc)
= 75 Vdc, T
p
Figure 1. Recovery Time Equivalent Test Circuit
» t
(T
A
rr
= 25°C unless otherwise noted)
0.1 mF
OSCILLOSCOPE
J
50 W INPUT
SAMPLING
= 150°C)
http://onsemi.com
R(peak)
V
2
R
is equal to 10 mA.
t
r
INPUT SIGNAL
10%
90%
t
p
Symbol
V
C
V
(BR)
I
t
R
rr
F
D
t
F
) of 10 mA.
I
I
Min
R
F
75
−
−
−
−
−
−
−
−
(I
F
= I
at i
R
OUTPUT PULSE
1000
1250
= 10 mA; MEASURED
1100
Max
R(REC)
900
5.0
2.0
3.0
80
t
−
rr
i
R(REC)
= 1.0 mA)
= 1.0 mA
t
nAdc
Unit
Vdc
mV
pF
ms