MBR130LSFT1 ON Semiconductor, MBR130LSFT1 Datasheet
MBR130LSFT1
Specifications of MBR130LSFT1
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MBR130LSFT1 Summary of contents
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... Package Designed for Optimal Automated Board Assembly • ESD Ratings: Machine Model, C Human Body Model, 3B • Pb−Free Package is Available Mechanical Characteristics • Reel Options: MBR130LSFT1 = 3,000 per 7 in reel/8 mm tape • Device Marking: L3L • Polarity Designator: Cathode Band • Weight: 11.7 mg (approximately) • ...
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... Mounted with 1 in. copper pad (Cu area 700 mm ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note Maximum Instantaneous Reverse Current (Note Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%. MBR130LSFT1 , T = 117° 110° http://onsemi.com 2 Symbol Value V 30 RRM V RWM ...
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... LEAD TEMPERATURE (°C) L Figure 5. Current Derating MBR130LSFT1 TYPICAL CHARACTERISTICS 125°C J 0.1 0.60 0.70 0.80 0.10 0. MAXIMUM INSTANTANEOUS FORWARD F Figure 2. Maximum Forward Voltage 1E+0 100E−3 10E−3 1E−3 100E−6 10E− Figure 4. Maximum Reverse Current 0.6 freq = 20 kHz ...
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... V , REVERSE VOLTAGE (VOLTS) R Figure 7. Capacitance 1000 D = 0.5 100 0.2 0.1 0.05 10 0.01 1 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 MBR130LSFT1 TYPICAL CHARACTERISTICS 125 = 25 ° 120 115 110 105 100 235 °C/W R qJA qJA Figure 8. Typical Operating Temperature Test Type > Min Pad < Die Size 38x38 @ 75% mils ...
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... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MBR130LSFT1 PACKAGE DIMENSIONS SOD−123LF CASE 498−01 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982 ...
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... USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MBR130LSFT1/D ...