FII40-06D IXYS, FII40-06D Datasheet - Page 3

• Manufacturer Part Number: FII40-06D
• Description: IGBT 600V 40A I-PACK
• Manufacturer: IXYS
• Type: IGBT Modules in ISOPLUS i4-PACr

Specifications of FII40-06D

• Igbt Type: NPT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 25A
• Current - Collector (ic) (max): 40A
• Current - Collector Cutoff (max): 600µA
• Input Capacitance (cies) @ Vce: 1.6nF @ 25V
• Power - Max: 125W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: ISOPLUS i4-PAC™
• Forward Voltage Drop: 2.5 V
• Mounting Style: SMD/SMT
• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 40
• Ic90, Tc = 90°c, Igbt, (a): 25
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 1.8
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 0.8
• Rthjc, Max, Igbt, (k/w): 1
• Package Style: ISOPLUS i4-PAC™ (5 - Lead)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q2152322

IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
I
I
V
C
C
GE
90
75
60
45
30
15
90
75
60
45
30
15
20
15
10
A
A
V
0
0
5
0
0
4
0
Fig. 1 Typ. output characteristics
Fig. 3 Typ. transfer characteristics
Fig. 5 Typ. turn on gate charge
V
1
6
GE
T
J
= 17V
40
= 125°C
15V
13V
V
I
C
CE
2
8
= 300 V
= 30 A
V
CE
10
80
3
= 20V
T
T
J
J
= 25°C
= 25°C
V
V
12
4
CE
GE
120
Q
G
14
5
nC
V
V
11V
9V
25T60
25T60
25T60
160
16
6
I
I
C
RM
I
90
75
60
45
30
15
50
40
30
20
10
A
F
A
0
0
Fig. 2 Typ. output characteristics
Fig. 4 Typ. forward characteristics
Fig. 6 Typ. turn off characteristics
90
75
60
45
30
15
0
0
A
0
0,0
I
t
RM
rr
of free wheeling diode
of free wheeling diode
1
200
V
GE
0,5
= 17 V
2
15 V
13 V
400
T
J
= 125°C
3
T
V
I
1,0
F
J
R
600
= 125°C
= 30 A
= 300 V
T
J
= 125°C
-di/dt
4
V
V
CE
F
FII 40-06D
800
1,5
A/µs
5
T
J
V
= 25°C
V
11V
25T60
25T60
9V
1000
25T60
6
2,0
20110119a
150
120
90
60
30
0
ns
3 - 4
t
rr