IRG4IBC30UDPBF International Rectifier, IRG4IBC30UDPBF Datasheet

IGBT W/DIODE 600V 17A TO220FP

IRG4IBC30UDPBF

Manufacturer Part Number
IRG4IBC30UDPBF
Description
IGBT W/DIODE 600V 17A TO220FP
Manufacturer
International Rectifier
Datasheets

Specifications of IRG4IBC30UDPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 12A
Current - Collector (ic) (max)
17A
Power - Max
45W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
17A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
45W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
*IRG4IBC30UDPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4IBC30UDPBF
Manufacturer:
NEC
Quantity:
20 000
Features
Benefits
Absolute Maximum Ratings
Thermal Resistance
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
• 2.5kV, 60s insulation voltage
• 4.8 mm creapage distance to heatsink
• UltraFast: Optimized for high operating
• IGBT co-packaged with HEXFRED
• Tighter parameter distribution
• Industry standard Isolated TO-220 Fullpak
• Lead-Free
• Simplified assembly
• Highest efficiency and power density
• HEXFRED
www.irf.com
R
R
R
Wt
V
I
I
I
I
I
I
Visol
V
P
P
T
T
kHz in resonant mode
ultrasoft recovery antiparallel diodes
switching losses and EMI
C
C
CM
LM
F
FM
STG
frequencies 8-40 kHz in hard switching, >200
outline
CES
GE
D
D
J
θJC
θJC
θJA
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
TM
antiparallel Diode minimizes
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
RMS Isolation Voltage, Terminal to Case…
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Parameter
Parameter
TM
ultrafast,
TM

IRG4IBC30UDPbF
G
n-channel
300 (0.063 in. (1.6mm) from case)
2.0 (0.07)
Typ.
–––
–––
–––
C
E
10 lbf•in (1.1 N•m)
TO-220 FULLP AK
-55 to +150
UltraFast CoPack IGBT
Max.
2500
± 20
600
8.9
8.5
17
68
68
92
45
18
@V
V
CE(on) typ.
V
Max.
GE
–––
2.8
4.1
65
CES
= 15V, I
= 600V
PD- 95598A
06/17/2010
= 1.95V
C
= 12A
Units
g (oz)
°C/W
Units
°C
W
V
A
V
1

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IRG4IBC30UDPBF Summary of contents

Page 1

... Thermal Resistance Parameter R Junction-to-Case - IGBT θJC R Junction-to-Case - Diode θJC R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRG4IBC30UDPbF G TM ultrafast, n-channel TM  300 (0.063 in. (1.6mm) from case) Typ. ––– ––– ––– 2.0 (0.07) PD- 95598A UltraFast CoPack IGBT ...

Page 2

Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltageƒ 600 (BR)CES Temperature Coeff. of Breakdown Voltage ∆V /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage ––– ∆ ...

Page 3

Square wave: 60% of rated 6 voltage I 4 Ideal diodes 2 0 0.1 Fig Typical Load Current vs. Frequency 100 T = 25° 20µs PULSE WIDTH 0.1 0.1 1 ...

Page 4

T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL ...

Page 5

1MHz ies res 1600 oes ies 1200 C oes 800 C res ...

Page 6

150° 480V 15V 1.6 GE 1.2 0.8 0.4 0 Collector-to-Emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter ...

Page 7

V = 200V 125° 25°C J 120 I = 24A 12A 6. 100 di /dt - (A/µs) f Fig Typical Reverse Recovery ...

Page 8

Same type device as D.U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on) GATE VOLTAGE D.U.T. ...

Page 9

Figure 18e. Macro Waveforms for L 1000V 50V 6000µF 100V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT Figure 18a's D.U. ...

Page 10

TO-220AB Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSAD'#Bà DUCÃ6TT@H7G`à GPUÃ8P9@Ã"#"! 6TT@H7G@9ÃPIà DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅFÅ Note: "P" in assembly line position indicates "Lead-Free" Notes:  Repetitive rating: V =20V; pulse width limited by maximum ...

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