IXGP20N120A3 IXYS, IXGP20N120A3 Datasheet - Page 4

• Manufacturer Part Number: IXGP20N120A3
• Description: IGBT PT 1200V 20A TO-220
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGP20N120A3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 180W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 40
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 20
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 715
• Eoff, Typ, Tj=125°c, Igbt, (mj): 10.1
• Rthjc, Max, Igbt, (°c/w): 0.69
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
1.00
0.10
0.01
16
14
12
10
10
0.00001
8
6
4
2
0
0
0
f
= 1MHz
5
5
10
10
Fig. 7. Transconductance
15
T
0.0001
J
Fig. 9. Capacitance
= - 40ºC
15
I
V
C
20
CE
- Amperes
C res
- Volts
20
25ºC
25
125ºC
C oes
25
30
C ies
Fig. 11. Maximum Transient Thermal Impedance
0.001
30
35
35
40
Pulse Width - Seconds
45
40
0.01
16
14
12
10
45
40
35
30
25
20
15
10
8
6
4
2
0
5
0
200
0
V
I
I
T
R
dv / dt < 10V / ns
IXGA20N120A3 IXGP20N120A3
C
G
CE
300
J
G
= 20A
= 10 mA
5
= 125ºC
= 600V
= 10Ω
Fig. 10. Reverse-Bias Safe Operating Area
400
10
0.1
500
15
Fig. 8. Gate Charge
Q
600
20
G
- NanoCoulombs
V
CE
700
25
- Volts
800
30
IXGH20N120A3
1
900
35
1000
40
1100
45
1200
50
10