IRG4PC40UPBF International Rectifier, IRG4PC40UPBF Datasheet

IGBT UFAST 600V 40A TO247AC

IRG4PC40UPBF

Manufacturer Part Number
IRG4PC40UPBF
Description
IGBT UFAST 600V 40A TO247AC
Manufacturer
International Rectifier
Type
Ultrafastr
Datasheets

Specifications of IRG4PC40UPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 20A
Current - Collector (ic) (max)
40A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
40A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AC
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Capacitance, Gate
2100 pF
Current, Collector
40 A
Energy Rating
15 mJ
Polarity
N-Channel
Power Dissipation
160 W
Resistance, Thermal, Junction To Case
0.77 °C/W
Speed, Switching
8 to 40 kHz (Hard Switching), >200 kHz (Resonant Mode)
Transistor Type
NPN
Voltage, Collector To Emitter Shorted
600 V
Voltage, Collector To Emitter, Saturation
2.15 V
Dc Collector Current
40A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
160W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Other names
*IRG4PC40UPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4PC40UPBF
Manufacturer:
IOR
Quantity:
12 660
INSULATED GATE BIPOLAR TRANSISTOR
Benefits
Thermal Resistance
www.irf.com
Features
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
Absolute Maximum Ratings
• UltraFast: Optimized for high operating
• Generation 4 IGBT design provides tighter
• Industry standard TO-247AC package
• Lead-Free
V
I
I
I
I
V
E
P
P
T
T
R
R
R
Wt
C
C
CM
LM
Generation 3
kHz in resonant mode
parameter distribution and higher efficiency than
J
ARV
STG
CES
GE
D
D
industry-standard Generation 3 IR IGBT's
θJC
θCS
θJA
frequencies 8-40 kHz in hard switching, >200
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Parameter
Parameter
G
n-channel
------
------
------
------
Min.
300 (0.063 in. (1.6mm) from case)
IRG4PC40UPbF
E
C
10 lbf•in (1.1N•m)
-55 to +150
TO-247AC
UltraFast Speed IGBT
Max.
6 (0.21)
600
160
160
±20
160
40
20
15
65
Typ.
------
------
0.24
V
@V
CE(on) typ.
V
GE
CES
= 15V, I
Max.
------
------
0.77
40
PD-95184
= 600V
= 1.72V
C
= 20A
04/23/04
Units
g (oz)
Units
°C/W
mJ
W
°C
V
A
V
1

Related parts for IRG4PC40UPBF

IRG4PC40UPBF Summary of contents

Page 1

... Storage Temperature Range STG Soldering Temperature, for 10 sec. Mounting torque, 6- screw. Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, flat, greased surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRG4PC40UPbF UltraFast Speed IGBT C V CES V CE(on) typ 15V n-channel TO-247AC Max. 600 40 20 ...

Page 2

... IRG4PC40UPbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS Temperature Coeff. of Breakdown Voltage ---- ∆V /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage ---- GE(th Forward Transconductance Zero Gate Voltage Collector Current ...

Page 3

... PULSE WIDTH 1 0 Collector-to-Emitter Voltage ( Fig Typical Output Characteristics www.irf.com uty ° ° ink riv ifie tio Frequency (kHz) of fundamental; for triangular wave, I=I RMS 150° 15V Fig Typical Transfer Characteristics IRG4PC40UPbF T ria lta ° ° µ - itte lta ...

Page 4

... IRG4PC40UPbF Case Temperature (°C) C Fig Maximum Collector Current vs. Case Temperature 0 0 .05 SIN 0 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 2 15V V = 15V 80µs PULSE WIDTH 2.0 1 -60 -40 Fig Collector-to-Emitter Voltage vs. Junction Temperature ectangular Pulse Duration (sec 40A ...

Page 5

... 20A 1.0 C 0.9 0.8 0.7 0 Gate Resistance ( Ω Fig Typical Switching Losses vs. Gate Resistance www.irf.com Fig Typical Gate Charge vs 0 -60 -40 Fig Typical Switching Losses vs. IRG4PC40UPbF = Gate-to-Emitter Voltage = 10Ω = 15V = 480V I = 40A 20A 10A C - Junction Temperature (°C) J Junction Temperature ...

Page 6

... IRG4PC40UPbF 4 10Ω 150° 480V 15V G E 3.0 2.0 1.0 0 Collector-to-Emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 125 ° Collecto r-to-E m itter V oltage ( Fig Turn-Off SOA TIN www.irf.com ...

Page 7

... Load Test Circuit 50V 1000V www.irf.com 480V .T. D river ff t=5µ IRG4PC40UPbF 480V 25° 480µF 960V Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T 480V Fig. 14b - Switching Loss Waveforms 7 ...

Page 8

... IRG4PC40UPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WIT EMBLY LOT CODE 5657 AS S EMBLE 35, 2000 EMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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