IRGP20B60PDPBF International Rectifier, IRGP20B60PDPBF Datasheet
IRGP20B60PDPBF
Specifications of IRGP20B60PDPBF
Available stocks
Related parts for IRGP20B60PDPBF
IRGP20B60PDPBF Summary of contents
Page 1
... Thermal Resistance Junction-to-Case-(each Diode) θJC R Thermal Resistance, Case-to-Sink (flat, greased surface) θCS R Thermal Resistance, Junction-to-Ambient (typical socket mount) θJA Weight SMPS IGBT n-channel Parameter e Parameter IRGP20B60PDPbF V = 600V CES V typ. = 2.05V CE(on 15V I = 13. Equivalent MOSFET Parameters R typ. = 158mΩ CE(on) ...
Page 2
... IRGP20B60PDPbF Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J R Internal Gate Resistance G V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆TJ Threshold Voltage temp. coefficient GE(th) gfe ...
Page 3
... J www.irf.com 250 200 150 100 50 100 120 140 160 1000 =15V IRGP20B60PDPbF 100 120 140 160 T C (°C) Fig Power Dissipation vs. Case Temperature 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6. (V) Fig Typ. IGBT Output Characteristics T = -40° 80µ 18V ...
Page 4
... IRGP20B60PDPbF 450 400 350 25°C 300 125°C 250 200 150 100 (V) Fig Typ. Transfer Characteristics V = 50V 10µ (V) Fig Typical 125°C J 350 300 250 200 150 100 (A) Fig Typ. Energy Loss vs 125° 200µ 390V Diode clamp used: 8ETH06 (See C.T.3) ...
Page 5
... V = 15V 10000 1000 100 10 400 500 600 700 CE 1.6 1.5 400V 1.4 1.3 1.2 1.1 0.9 0.8 0.7 0 IRGP20B60PDPbF td OFF Ω ) Fig Typ. Switching Time vs 390V 13A Diode clamp used: 8ETH06 (See C.T.3) Cies Coes Cres (V) Fig. 16- Typ. Capacitance vs 0V 1MHz ...
Page 6
... IRGP20B60PDPbF 200V 125° 25° 100 di /dt - (A/µs) f 500 V = 200V 125° 25°C J 400 I = 16A 8. 4.0A F 300 200 100 0 100 di /dt - (A/µ 200V I = 16A 125° 8. 25° 4. 1000 100 f 10000 V = 200V T = 125° 25°C 1000 100 1000 100 16A 8. ...
Page 7
... THERMAL RESPONSE ) 0.001 1E-006 1E-005 Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com IRGP20B60PDPbF τ J τ J τ τ τ 1 τ ...
Page 8
... IRGP20B60PDPbF 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) L PFC diode DUT / DRIVER Rg Fig.C.T.3 - Switching Loss Circuit 8 L VCC 80 V DUT VCC REVERSE RECOVERY CIRCUIT V = 200V R 0.01 Ω 70µH D.U.T. D dif/dt ADJUST IRFP250 G S Fig. C.T.5 - Reverse Recovery Parameter Test Circuit L DUT 480V Rg Fig ...
Page 9
... Fig. WF2 - Typ. Turn-on Loss Waveform RRM di(rec)M/dt 0.75 I RRM di / RRM rr (rec)M b RRM Fig. WF3 - Reverse Recovery Waveform and Definitions IRGP20B60PDPbF 45 40 TEST CURRENT 90% test current 20 10% test current Eon Loss -5 7.85 7.95 8.05 8.15 Time (µ 125°C using Fig. CT.3 ...
Page 10
... IRGP20B60PDPbF EXAMPLE: T HIS IS AN IRFPE30 WIT H ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" TO-247AC package is not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...
Page 11
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...