IRG4PH50SPBF International Rectifier, IRG4PH50SPBF Datasheet

IGBT STD 1200V 57A TO247AC

IRG4PH50SPBF

Manufacturer Part Number
IRG4PH50SPBF
Description
IGBT STD 1200V 57A TO247AC
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4PH50SPBF

Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
1.7V @ 15V, 33A
Current - Collector (ic) (max)
57A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Transistor Type
IGBT
Dc Collector Current
57A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
200W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
*IRG4PH50SPBF

Available stocks

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Manufacturer
Quantity
Price
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Part Number:
IRG4PH50SPBF
Manufacturer:
IR
Quantity:
20 000
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Part Number:
IRG4PH50SPBF
Quantity:
32 000
I
Features
Benefits
V
I
I
I
I
V
E
P
P
T
T
R
R
R
Wt
Absolute Maximum Ratings
Thermal Resistance
NSULATED GATE BIPOLAR TRANSISTOR
C
C
CM
LM
www.irf.com
CES
GE
ARV
D
D
J
STG
θJC
θCS
θJA
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
=25°
=100°
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Parameter
Parameter
d
e
G
n-channel
Min.
IRG4PH50SPbF
300 (0.063 in. (1.6mm) from case)
C
E
10 lbf·in (1.1 N·m)
-55 to + 150
6.0(0.21)
1200
± 20
± 30
114
114
270
200
TO-247AC
57
33
80
Typ.
0.24
Standard Speed IGBT
Max.
V
@V
CE(on) typ.
V
GE
CES
Max.
0.64
= 15V, I
40
=1200V
= 1.47V
C
Units
Units
g (oz)
= 33A
°C/W
07/08/08
mJ
°C
W
V
A
V
1

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IRG4PH50SPBF Summary of contents

Page 1

... Storage Temperature Range STG Soldering Temperature, for 10 sec. Mounting Torque, 6- Screw. Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRG4PH50SPbF Standard Speed IGBT n-channel TO-247AC Max. 1200 57 33 114 d 114 ± 20 ± 270 ...

Page 2

... IRG4PH50SPbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Emitter-to-Collector Breakdown Voltage (BR)ECS Temperature Coeff. of Breakdown Voltage ∆V /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) DV /DT Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance fe CES I Gate-to-Emitter Leakage Current GES ...

Page 3

... Gate drive as specified Power Dissipation = 40W 1 f, Frequency (kHz) (Load Current = I of fundamental) RMS 1000 100 ° 150 15V 1 4.0 5.0 5 Fig Typical Transfer Characteristics IRG4PH50SPbF Triangular wave: Clamp voltage: 80% of rated A 10 ° ° 50V CC 5µs PULSE WIDTH ...

Page 4

... IRG4PH50SPbF 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 1 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.001 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 2 15V PULSE WIDTH 2.0 1.5 1.0 125 ...

Page 5

... Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs. 1000 15V 960V CC 100 -60 -40 -20 Fig Typical Switching Losses vs. IRG4PH50SPbF = 400V = 33A 100 125 150 Q , Total Gate Charge (nC) G Gate-to-Emitter Voltage Ω Ω = 5Ohm 16 100 120 140 160 ° Junction Temperature ( ...

Page 6

... IRG4PH50SPbF 120 Ω 5Ohm 150 C ° 960V CC 100 V = 15V Collector Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 6 1000 100 10 SAFE OPERATING AREA Fig Reverse Bias SOA = 20V o = 125 C 10 100 1000 V , Collector-to-Emitter Voltage (V) CE www.irf.com 10000 ...

Page 7

... L 50V 1000V * Driver same type as D.U.T 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. - Driver* 50V 1000V Ã www.irf.com D.U. D.U. IRG4PH50SPbF 480µF 960V - - - 7 ...

Page 8

... IRG4PH50SPbF TO-247AC Package Outline TO-247AC Part Marking Information IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 (Dimensions are shown in milimeters (inches)) 5)3( Ã " C %ÃÃÃÃÃÃÃÃÃÃÃ & Data and specifications subject to change without notice. ...

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