IXGH24N60AU1 IXYS, IXGH24N60AU1 Datasheet

IGBT HFST W/DIO 600V 48A TO247AD

IXGH24N60AU1

Manufacturer Part Number
IXGH24N60AU1
Description
IGBT HFST W/DIO 600V 48A TO247AD
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet

Specifications of IXGH24N60AU1

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 24A
Current - Collector (ic) (max)
48A
Power - Max
150W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
2.7 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current At 25 C
48 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
150 W
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGH24N60AU1
Manufacturer:
KINGBRIGHT
Quantity:
30 000
Part Number:
IXGH24N60AU1S
Manufacturer:
IXYS
Quantity:
15 500
HiPerFAST
IGBT with Diode
Combi Pack
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
Weight
Symbol
BV
V
I
I
V
©1997 IXYS Corporation. All rights reserved.
C25
C90
CM
CES
GES
stg
CES
CGR
GES
GEM
C
J
JM
GE(th)
CE(sat)
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 100 H
T
Mounting torque, TO-247 AD
Test Conditions
I
I
V
V
V
I
C
C
C
J
J
C
C
C
C
GE
CE
GE
CE
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 90 C
= 25 C, 1 ms
= 15 V, T
= 25 C
= 750 A, V
= 250 A, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C90
, V
TM
GE
GE
VJ
CES
= 15 V
= 125 C, R
= 20 V
GE
CE
= 0 V
= V
GE
GE
= 1 M
G
= 22
T
T
(T
J
J
= 25 C
= 125 C
J
TO-247 SMD
TO-247 AD
= 25 C, unless otherwise specified)
IXGH 24N60AU1
IXGH 24N60AU1S
min.
600
2.5
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
I
typ.
1.13/10 Nm/lb.in.
CM
= 48
600
600
150
150
300
CES
20
30
48
24
96
4
6
max.
500
100
5.5
2.7
8
mA
nA
W
V
V
V
V
A
A
A
A
V
V
V
g
g
C
C
C
C
A
Features
Applications
Advantages
International standard packages
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD
IGBT and anti-parallel FRED in one
package
2nd generation HDMOS
Low V
- for minimum on-state conduction
MOS Gate turn-on
- drive simplicity
Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low I
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Space savings (two devices in one
package)
Easy to mount with 1 screw, TO-247
(isolated mounting screw hole)
Reduces assembly time and cost
losses
TO-247 AD
(24N60AU1)
G = Gate,
E = Emitter,
V
I
V
t
C25
fi
CES
CE(sat)
TO-247 SMD
(24N60AU1S)
CE(sat)
G
C
E
G
E
C = Collector,
TAB = Collector
=
=
=
= 275 ns
TM
RM
92717H (3/97)
process
600 V
2.7 V
48 A
C (TAB)
C (TAB)

Related parts for IXGH24N60AU1

IXGH24N60AU1 Summary of contents

Page 1

... 250 GE(th 0.8 • V CES CE CES GES CE(sat) C C90 GE ©1997 IXYS Corporation. All rights reserved. IXGH 24N60AU1 IXGH 24N60AU1S Maximum Ratings 600 = 1 M 600 0.8 V CES 150 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in. TO-247 SMD 4 TO-247 AD 6 Characteristic Values ( unless otherwise specified) J min ...

Page 2

... T or CES 250 off 400 , higher T or 2.3 CES J 0.25 Characteristic Values ( unless otherwise specified) J min. typ /dt = 240 125 C 150 4,835,592 4,850,072 IXGH24N60AU1S TO-247 AD Outline 120 Dim. Millimeter Min. Max 4.7 5 2.2 2. 2.2 2.6 2 200 ns b 1.0 1.4 270 ...

Page 3

... 25° 40° 125° Volts GE ©1997 IXYS Corporation. All rights reserved. IXGH24N60AU1 40A 10A G20N60p1.JNB IXGH24N60AU1S Fig. 2 Output Characterstics 150 T = 25°C J 125 100 Volts CE Fig. 4 Temperature Dependence of Output Saturation Voltage 1 15V I = 40A GE C 1.4 1 20A C 1.0 0 10A C 0.6 0.4 -50 -25 ...

Page 4

... G24N60P2.JNB D = Duty Cycle 0.01 0.1 Pulse Width - seconds 4,835,592 4,850,072 IXGH24N60AU1S Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time 125° 24A C E off 100 R - Ohms G Fig.10 Turn-Off Safe Operating Area T = 125°C ...

Page 5

... Fig.13 Peak Forward Voltage 2.0 2.5 0 Fig.15 Reverse Recovery Chargee 120 160 1 Fig.17 Reverse Recovery Time 0 30A F max. 0.6 0.4 0.2 0.0 600 0 IXGH24N60AU1S FR Forward Recovery Time 125° 37A 100 200 300 400 500 di /dt - A/µ 100° 350V 30A F max. typ 60A ...

Page 6

... IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: IXGH24N60AU1 0.01 Pulse Width - Seconds 4,835,592 4,881,106 4,850,072 4,931,844 IXGH24N60AU1S 0.1 5,017,508 5,049,961 5,187,117 5,486,715 5,034,796 5,063,307 5,237,481 5,381,025 ...

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