IXGT32N170 T&R IXYS, IXGT32N170 T&R Datasheet
IXGT32N170 T&R
Specifications of IXGT32N170 T&R
Related parts for IXGT32N170 T&R
IXGT32N170 T&R Summary of contents
Page 1
... GE(th 0.8 • V CES CE CES ± GES CE(sat) C C90 GE © 2003 IXYS All rights reserved IXGH 32N170 IXGT 32N170 Maximum Ratings 1700 = 1 MΩ 1700 GE ±20 ± 200 = 5 Ω 0.8 V 350 -55 ... +150 150 -55 ... +150 300 260 1.13/10Nm/lb.in. TO-247 AD TO-268 Characteristic Values (T = 25° ...
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... G d(off off R thJC R (TO-247) thCK Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max 120 ...
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... Fig. 3. Output Characteristics @ 125 Deg 17V GE 15V 56 13V 48 11V Volts CE Fig. 5. Collector-to-Em itter Voltage vs . Gate-to-Em iiter voltage Volts G E © 2003 IXYS All rights reserved 240 210 180 9V 150 120 3.5 4 4.5 5 1.8 1.6 9V 1.4 1 0.8 0 100 T = 25º 64A 32A ...
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... 1020V Amperes C Fig. 11. Gate Charge 850V 32A 0mA nanoCoulombs G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents off 125º 25º 10000 1000 100 10 90 120 ...
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... IXYS All rights reserved Fig Tra The Puls e W idth - millis ec onds IXGH 32N170 IXGT 32N170 ...