IRGPS60B120KDP International Rectifier, IRGPS60B120KDP Datasheet

IGBT W/DIODE 1200V 105A SUPER247

IRGPS60B120KDP

Manufacturer Part Number
IRGPS60B120KDP
Description
IGBT W/DIODE 1200V 105A SUPER247
Manufacturer
International Rectifier
Datasheets

Specifications of IRGPS60B120KDP

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.75V @ 15V, 60A
Current - Collector (ic) (max)
105A
Power - Max
595W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
Super-247-3 (Straight Leads)
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Transistor Type
IGBT
Dc Collector Current
105A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
595W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRGPS60B120KDP

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRGPS60B120KDP
Manufacturer:
FSC
Quantity:
6 000
Part Number:
IRGPS60B120KDPBF
Manufacturer:
IR
Quantity:
12 000
Features
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation.
Thermal Resistance
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10μs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Super-247 Package.
Absolute Maximum Ratings
R
R
R
R
Wt
Le
V
I
I
I
I
I
I
I
V
P
P
T
T
www.irf.com
C
C
CM
LM
F
F
FM
STG
CES
GE
D
D
J
θJC
θJC
θCS
θJA
@ T
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Internal Emitter Inductance (5mm from package)
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current 
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Parameter
Parameter
G
IRGPS60B120KD
N-channel
20 (2)
Min.
–––
–––
–––
–––
–––
–––
300 (0.063 in. (1.6mm) from case)
Motor Control Co-Pack IGBT
E
C
-55 to +150
6.0 (0.21)
Super-247™
105‚
Max.
1200
± 20
240
240
120
240
595
238
Typ.
60
60
0.24
–––
–––
–––
–––
13
V
I
CE
CE(on)
V
@ V
= 60A, Tj=25°C
CES
Max.
GE
typ. = 2.50V
0.20
0.41
–––
–––
–––
–––
40
= 1200V
= 15V,
Units
Units
N(kgf)
g (oz)
°C/W
W
nH
°C
V
A
V
1
3/10/08

Related parts for IRGPS60B120KDP

IRGPS60B120KDP Summary of contents

Page 1

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE ...

Page 2

IRGPS60B120KD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ΔV Temperature Coeff. of Breakdown Voltage /ΔT (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage ––– Δ ...

Page 3

LIMITED BY PACKAGE 120 100 100 120 140 160 T C (°C) Fig Maximum DC Collector Current vs. Case Temperature 1000 100 0.1 1 ...

Page 4

IRGPS60B120KD 120 18V 100 VGE = 15V VGE = 12V VGE = 10V 80 VGE = 8. (V) Fig Typ. IGBT Output Characteristics T = ...

Page 5

30A 60A 120A (V) Fig Typical -40° ...

Page 6

IRGPS60B120KD 12000 10000 8000 E OFF 6000 4000 2000 (A) Fig Typ. Energy Loss vs 125°C; L=200μ 4.7Ω 15V G GE 25000 ...

Page 7

4.7 Ω Ω Ω 100 Ω (A) Fig Typical Diode ...

Page 8

IRGPS60B120KD 4000 3500 3000 2500 2000 1500 1000 500 0 0 10000 1000 100 (V) Fig. 22- Typ. Capacitance vs 0V 1MHz GE 8 4.7 Ω 22 Ω 47 ...

Page 9

D = 0.50 0.20 0.10 0.1 0.05 0.01 0.02 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-005 0.0001 Fig 24. Normalized Transient Thermal Impedance, Junction-to-Case (IGBT 0.50 0.20 0.10 0.1 0.05 0.01 0.02 SINGLE ...

Page 10

IRGPS60B120KD DUT 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) Driver D C DUT Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.5 - Resistive Load Circuit 10 L VCC 80 V diode clamp / DUT 900V Fig.C.T.4 - Switching Loss Circuit V ...

Page 11

Fig. WF1 - Typ. Turn-off Loss Waveform @ Tj=125°C using Fig. CT.4 900 800 700 90 600 tr 500 400 300 200 100 Eof f Loss -100 -0.50 0.50 1.50 Time ...

Page 12

IRGPS60B120KD Super-247™ Package Outline 12 www.irf.com ...

Page 13

... Super-247™ Part Marking Information EXAMPLE: THIS IS AN IRFPS37N50A WITH ASSEMBLY LOT CODE A8B9 INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE Notes:  80 20V 100 μ CES GE ‚ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 105A. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www ...

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