IRG4BC20UDPBF International Rectifier, IRG4BC20UDPBF Datasheet

IGBT N-CH W/DIO 600V 13A TO220AB

IRG4BC20UDPBF

Manufacturer Part Number
IRG4BC20UDPBF
Description
IGBT N-CH W/DIO 600V 13A TO220AB
Manufacturer
International Rectifier
Type
Ultrafastr
Datasheets

Specifications of IRG4BC20UDPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 6.5A
Current - Collector (ic) (max)
13A
Power - Max
60W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Package Type
TO-220AB
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Capacitance, Gate
530 pF
Current, Collector
13 A
Energy Rating
0.29 mJ
Polarity
N-Channel
Power Dissipation
60 W
Resistance, Thermal, Junction To Case
2.1 °C/W
Speed, Switching
8 to 40 kHz (Hard Switching), >200 kHz (Resonant Mode)
Voltage, Collector To Emitter Shorted
600 V
Voltage, Collector To Emitter, Saturation
2.27 V
Transistor Type
IGBT
Dc Collector Current
13A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
60W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Other names
*IRG4BC20UDPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4BC20UDPBF
Manufacturer:
IXYS
Quantity:
3 000
Company:
Part Number:
IRG4BC20UDPBF M
Quantity:
25 780
Features
www.irf.com
θ
θ
θ
θ
â

G
n-channel
C
E
TO-220AB
CE(on) typ.
GE
CES
=
C
1

Related parts for IRG4BC20UDPBF

IRG4BC20UDPBF Summary of contents

Page 1

Features θ θ θ θ www.irf.com G â n-channel  ‚ C CES = CE(on) typ TO-220AB 1 ...

Page 2

J ∆ ∆ ƒ „ J Ω Ω www.irf.com ...

Page 3

T = 25° 20µs PULSE WIDTH 0.1 0 Collector-to-Emitter Voltage (V) CE www.irf.com 1 f, Frequency (kHz) RMS 100 ...

Page 4

T , Case Temperature (° 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 4 2 ...

Page 5

1MHz ies res oes ce gc 800 C ies 600 C oes 400 C res 200 0 ...

Page 6

150° 480V 15V GE 0.9 0.6 0.3 0 Collector-to-Emitter Current (A) C 100 10 1 0.1 0.4 6 1000 ...

Page 7

V = 200V 125° 25° 4. 100 di /dt - (A/µs) f 500 V = 200V 125° 25°C ...

Page 8

Same type device as D.U.T. 430µF 80% of Vce D.U. off(diode d(on) GATE VOLTAGE D.U.T. 10% +Vg +Vg Vce 10% Ic Vcc 90 Vce tr td(on d(on +Vge 10% ...

Page 9

L 1000V 50V 6000µF 100V www.irf.com Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT D.U. VCC Pulsed Collector Current VCC ICM 480µF Test ...

Page 10

Notes: Repetitive rating: V =20V; pulse width limited by maximum junction temperature GE (figure 20) ‚V =80%( =20V, L=10µ CES GE ƒPulse width ≤ 80µs; duty factor ≤ 0.1%. „Pulse width 5.0µs, single shot. Y6HQG ) ...

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