IRGIB7B60KDPBF International Rectifier, IRGIB7B60KDPBF Datasheet
IRGIB7B60KDPBF
Specifications of IRGIB7B60KDPBF
Related parts for IRGIB7B60KDPBF
IRGIB7B60KDPBF Summary of contents
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... Junction-to-Case- Diode R θ JC Case-to-Sink, flat, greased surface R θCS R Junction-to-Ambient, typical socket mount θ Weight www.irf.com IRGIB7B60KDPbF G n-ch an nel Parameter 300 (0.063 in. (1.6mm) from case) Parameter Min. ––– ––– ––– ––– ––– ...
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... IRGIB7B60KDPbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Threshold Voltage temp. coefficient GE(th) J gfe Forward Transconductance I Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...
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... Fig Maximum DC Collector Current vs. Case Temperature Fig Forward SOA T = 25° www.irf.com 150°C ≤ J IRGIB7B60KDPbF Fig Power Dissipation vs. Case Temperature Fig Reverse Bias SOA T = 150°C; V =15V ...
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... IRGIB7B60KDPbF Fig Typ. IGBT Output Characteristics T = -40° 80µs J Fig Typ. IGBT Output Characteristics T = 150° 80µ Fig Typ. IGBT Output Characteristics T = 25° 80µs J Fig Typ. Diode Forward Characteristics tp = 80µs www.irf.com ...
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... Fig Typical -40°C J Fig Typical 150°C J www.irf.com vs vs IRGIB7B60KDPbF Fig Typical V vs 25°C J Fig Typ. Transfer Characteristics V = 360V 10µ ...
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... IRGIB7B60KDPbF Fig Typ. Energy Loss vs 150°C; L=1.1mH 50Ω Fig Typ. Energy Loss vs 150°C; L=1.1mH 8.0A 400V 15V GE Ω 400V CE = 15V Fig Typ. Switching Time vs 150°C; L=1.1mH 400V 50Ω 15V G GE Ω Fig Typ. Switching Time vs 150°C; L=1.1mH; V ...
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... Fig Typical Diode 150°C J Fig. 19- Typical Diode 400V 8.0A www.irf.com 50 Ω Ω Ω Ω vs vs 15V 150°C IRGIB7B60KDPbF Ω) Fig Typical Diode I vs 150° 8. 50Ω 150Ω 270Ω Ω Fig Typical Diode 400V 15V;T = 150° ...
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... IRGIB7B60KDPbF Fig. 22- Typ. Capacitance vs 0V 1MHz GE 8 470Ω 270Ω 150 Ω Ω Fig Typical Diode E vs 150°C J Fig Typical Gate Charge vs 8.0A 600µH CE www.irf.com GE ...
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... Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com IRGIB7B60KDPbF τ τ J τ τ τ τ τ 1 τ τ τ τ Ci= τi/ (°C/ τ τ J τ C τ J τ τ τ 1 τ τ τ Ci= τ ...
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... IRGIB7B60KDPbF 10 www.irf.com ...
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... Ice 2 Ice 0.6 0.8 1 Fig. WF2- Typ. Turn-on Loss Waveform 10% Peak IRR -10 -15 -20 0.15 0.25 IRGIB7B60KDPbF 600 500 tr Vce Ice 400 90% Ice 10% Ice 300 200 100 5% Vce 0 Eon Loss -100 0.3 0.5 0.7 Time (uS 150°C using Fig. CT.4 J 400 350 ...
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... IRGIB7B60KDPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information EXAMPLE: T HIS IS AN IRF I840G WIT EMBLY LOT CODE 3432 AS S EMBLE 1999 EMBLY LINE "K" Note: "P" in assembly line position indicates "Lead-Free" Notes 80 15V 100µH, R ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...