IXGH20N120A3 IXYS, IXGH20N120A3 Datasheet - Page 6

• Manufacturer Part Number: IXGH20N120A3
• Description: IGBT PT 1200V 20A TO-247
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGH20N120A3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 180W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 40
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 20
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 715
• Eoff, Typ, Tj=125°c, Igbt, (mj): 10.1
• Rthjc, Max, Igbt, (°c/w): 0.69
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
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180
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120
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160
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100
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60
40
20
80
60
40
20
0
10
25
t
R
V
t
T
V
r i
CE
G
35
r i
Fig. 20. Inductive Turn-on Switching Times
J
CE
Fig. 18. Inductive Turn-on Switching Times
= 10Ω , V
= 125ºC, V
15
= 960V
= 960V
45
20
GE
I
t
d(on)
GE
C
vs. Junction Temperature
t
= 15V
d(on)
= 40A
55
= 15V
T
vs. Gate Resistance
- - - -
J
- - - -
25
- Degrees Centigrade
R
65
G
- Ohms
30
75
I
I
85
C
C
35
I
= 40A
= 20A
C
= 20A
95
40
105
45
115
125
50
55
50
45
40
35
30
25
20
15
10
5
28
26
24
22
20
18
16
14
160
140
120
100
80
60
40
20
0
20
T
22
t
R
V
J
IXGA20N120A3 IXGP20N120A3
Fig. 19. Inductive Turn-on Switching Times
r i
G
CE
= 125ºC
= 10Ω , V
= 960V
24
t
GE
d(on)
26
= 15V
vs. Collector Current
- - - -
28
I
C
30
- Amperes
32
IXGH20N120A3
34
T
J
= 25ºC
36
IXYS REF: G_20N120A3(4L)10-01-08
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40
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