IRG4BC20W-SPBF International Rectifier, IRG4BC20W-SPBF Datasheet

IGBT WARP 600V 13A D2PAK

IRG4BC20W-SPBF

Manufacturer Part Number
IRG4BC20W-SPBF
Description
IGBT WARP 600V 13A D2PAK
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4BC20W-SPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.6V @ 15V, 6.5A
Current - Collector (ic) (max)
13A
Power - Max
60W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
*IRG4BC20W-SPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4BC20W-SPBF
Manufacturer:
IR
Quantity:
20 000
INSULATED GATE BIPOLAR TRANSISTOR
Benefits
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
• Lower switching losses allow more cost-effective
• Of particular benefit to single-ended converters and
• Low conduction losses and minimal minority-carrier
• Designed expressly for Switch-Mode Power
• Industry-benchmark switching losses improve
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
• Lead-Free
R
R
R
Wt
V
I
I
I
I
V
E
P
P
T
T
C
C
CM
LM
tighter parameters distribution, exceptional reliability
operation than power MOSFETs up to 150kHz
("hard switched" mode)
boost PFC topologies 150W and higher
recombination make these an excellent option for
resonant mode switching as well (up to >>300kHz)
Supply and PFC (power factor correction)
applications
efficiency of all power supply topologies
J
STG
CES
GE
ARV
D
D
θJC
θCS
θJA
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Parameter

IRG4BC20W-SPbF
G
N-channel
300 (0.063 in. (1.6mm) from case )
Typ.
1.44
–––
–––
0.5
E
C
-55 to + 150
± 20
600
200
6.5
13
52
52
60
24
D
2
Pak
@V
V
CE(on) typ.
Max.
V
GE
–––
–––
2.1
40
CES
PD - 95782A
= 15V, I
= 600V
= 2.16V
C
= 6.5A
Units
g (oz)
°C/W
mJ
°C
V
A
V
01/25/10
1

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IRG4BC20W-SPBF Summary of contents

Page 1

... STG Soldering Temperature, for 10 seconds Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRG4BC20W-SPbF N-channel  - 150 300 (0.063 in. (1.6mm) from case ) Typ. ––– 0.5 ––– 1. 95782A V = 600V ...

Page 2

... IRG4BC20W-SPbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Emitter-to-Collector Breakdown Voltage „ (BR)ECS ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance … fe CES I Gate-to-Emitter Leakage Current ...

Page 3

... Fig Typical Load Current vs. Frequency 100 150 C ° ° 20µs PULSE WIDTH Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics www.irf.com IRG4BC20W-SPbF For both: Duty cycle: 50 125° 90°C sink Gate drive as specified Power Dissipation = 13W 10 f, Frequency (kHz) (Load Current = I of fundamental) RMS 100 T = 150 ...

Page 4

... IRG4BC20W-SPbF 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 3 15V PULSE WIDTH 2.0 1.0 -60 -40 -20 125 150 ° ...

Page 5

... C res Collector-to-Emitter Voltage (V) CE Fig Typical Capacitance vs. Collector-to-Emitter Voltage 0. 480V 15V GE ° 6.5A C 0.14 0.13 0. (Ω Gate Resistance G Fig Typical Switching Losses vs. Gate Resistance www.irf.com IRG4BC20W-SPbF SHORTED 100 0 Fig Typical Gate Charge vs 0.1 0. -60 -40 -20 Fig Typical Switching Losses vs. = 400V = 6. ...

Page 6

... IRG4BC20W-SPbF 0.8 Ω Ohm 150 C ° 480V 15V GE 0.6 0.4 0.2 0 Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 6 100 SAFE OPERATING AREA 20V o = 125 C 10 100 , Collector-to-Emitter Voltage (V) Fig Turn-Off SOA www.irf.com 1000 ...

Page 7

... Driver same type as D.U.T 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13a - Clamped Inductive Load Test Circuit 50V 1000V Ã 10 90% 10 d(on) www.irf.com IRG4BC20W-SPbF D.U. VCC D.U.T. Driver 90% t d(off t=5µ off ...

Page 8

... IRG4BC20W-SPbF 2 Dimensions are shown in millimeters (inches DIU@SI6UDPI6G S@8UD D@S GPBP 6TT@H7G` GPUÃ8P9@ 8 Q6SUÃIVH7@S $"T 96U@Ã8P9@ QÃ2Ã9@TDBI6U@TÃG@69 S@@ QSP9V8UÃPQUDPI6G `@6SÃÃ2Ã! X@@FÃ! 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ www.irf.com ...

Page 9

... NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com IRG4BC20W-SPbF 1.60 (.063) 1.50 (.059) 1.60 (.063) 4.10 (.161) 1.50 (.059) 3.90 (.153) 11.60 (.457) 11 ...

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